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Electronic state back action on mechanical motion in a quantum point contact coupled to a nanomechanical resonator
Authors:
Andrey A. Shevyrin,
Askhat K. Bakarov,
Alexander A. Shklyaev,
Arthur G. Pogosov
Abstract:
In a nanomechanical resonator coupled to a quantum point contact, the back action of the electronic state on mechanical motion is studied. The quantum point contact conductance changing with subband index and the eigenfrequency of the resonator are found to correlate. A model is constructed explaining the frequency deviations by the alternating ability of the quantum point contact to screen the pi…
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In a nanomechanical resonator coupled to a quantum point contact, the back action of the electronic state on mechanical motion is studied. The quantum point contact conductance changing with subband index and the eigenfrequency of the resonator are found to correlate. A model is constructed explaining the frequency deviations by the alternating ability of the quantum point contact to screen the piezoelectric charge induced by mechanical oscillations. The observed effects can be used to develop electromechanical methods for studying the density of states in quasi-one-dimensional systems.
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Submitted 22 May, 2024;
originally announced May 2024.
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Temperature Dependence of Electron Viscosity in Superballistic GaAs Point Contacts
Authors:
Daniil I. Sarypov,
Dmitriy A. Pokhabov,
Arthur G. Pogosov,
Evgeny Yu. Zhdanov,
Andrey A. Shevyrin,
Askhat K. Bakarov,
Alexander A. Shklyaev
Abstract:
Electron transport in suspended and non-suspended GaAs point contacts (PCs) of different widths is experimentally studied. The superballistic contribution to the conductance, that demonstrates a distinctive quadratic dependence on the PC width and temperature growth, is extracted from the experiment. The studied PCs are shown to be described in the framework of hydrodynamic electron flow a in wide…
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Electron transport in suspended and non-suspended GaAs point contacts (PCs) of different widths is experimentally studied. The superballistic contribution to the conductance, that demonstrates a distinctive quadratic dependence on the PC width and temperature growth, is extracted from the experiment. The studied PCs are shown to be described in the framework of hydrodynamic electron flow a in wide temperature range. At low temperatures, $T$, the viscosity is found out to obey the law $1/T^2$ expected for 2D systems, while at higher temperatures it has the dependence $1/T$. Similar measurements performed after the suspension of PCs, i.e. their separation from substrate, show that the electron viscosity reduces in the whole temperature range, that indicates an enhanced electron-electron interaction in suspended structures.
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Submitted 15 May, 2024;
originally announced May 2024.
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Hydrodynamics of electron-hole fluid photogenerated in a mesoscopic two-dimensional channel
Authors:
M. A. T. Patricio,
G. M. Jacobsen,
M. D. Teodoro,
G. M. Gusev,
A. K. Bakarov,
Yu. A. Pusep
Abstract:
The dynamics of the diffusion flow of holes photoinjected into a mesoscopic GaAs channel of variable width, where they, together with background electrons, form a hydrodynamic electron-hole fluid, is studied using time-resolved microphotoluminescence. It is found that the rate of recombination of photoinjected holes, which is proportional to the rate of their flow, decreases when holes pass throug…
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The dynamics of the diffusion flow of holes photoinjected into a mesoscopic GaAs channel of variable width, where they, together with background electrons, form a hydrodynamic electron-hole fluid, is studied using time-resolved microphotoluminescence. It is found that the rate of recombination of photoinjected holes, which is proportional to the rate of their flow, decreases when holes pass through the expanded sections of the channel. In fact, this is the Venturi effect, which consists in a decrease in the velocity of the fluid in the expanded sections of the pipe. Moreover, a non-uniform diffusion velocity profile is observed, similar to the parabolic Hagen-Poiseuille velocity profile, which indicates a viscous hydrodynamic flow. It is shown that in argeement with a theory, the magnetic field strongly suppresses the viscosity of the electron-hole fluid. Additional evidence of the viscous nature of the studied electron-hole fluid is the observed increase in the recombination rate with increasing temperature, which is similar to the decrease in the electrical resistance of viscous electrons with temperature.
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Submitted 6 March, 2024;
originally announced March 2024.
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Optical realization of magneto-intersubband oscillations
Authors:
M. L. Savchenko,
A. A. Bykov,
A. Shuvaev,
A. K. Bakarov,
A. Pimenov,
O. E. Raichev
Abstract:
We report on the optical realization of the magneto-intersubband oscillations that have been measured in the sub-terahertz transmittance of a GaAs quantum well with two subbands occupied. Following their dc analogue, the oscillations are periodic in the inverse magnetic field with the period governed by the subband gap. Their magnitude and polarization dependence accurately follow the presented si…
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We report on the optical realization of the magneto-intersubband oscillations that have been measured in the sub-terahertz transmittance of a GaAs quantum well with two subbands occupied. Following their dc analogue, the oscillations are periodic in the inverse magnetic field with the period governed by the subband gap. Their magnitude and polarization dependence accurately follow the presented simplified version of the dynamic magneto-intersubband oscillations equation that naturally combines dc magneto-intersabband oscillations with microwave-induced resistance oscillations (MIRO). Simultaneously measured photoresistance also reveals its strong sensitivity to the sign of the circular polarization, proving the used theoretical modeling.
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Submitted 9 February, 2024;
originally announced February 2024.
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Geometric engineering of viscous magnetotransport in a two-dimensional electron system
Authors:
A. D. Levin,
G. M. Gusev,
A. S. Yaroshevich,
Z. D. Kvon,
A. K. Bakarov
Abstract:
In this study, we present our experimental investigation on the magnetotransport properties of a two-dimensional electron system in GaAs quantum wells utilizing a variety of device geometries, including obstacles with thin barriers and periodic width variations. Our primary focus is to explore the impact of these geometries on the electron viscous flow parameters, enabling precise manipulation of…
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In this study, we present our experimental investigation on the magnetotransport properties of a two-dimensional electron system in GaAs quantum wells utilizing a variety of device geometries, including obstacles with thin barriers and periodic width variations. Our primary focus is to explore the impact of these geometries on the electron viscous flow parameters, enabling precise manipulation of hydrodynamic effects under controlled conditions. Through an analysis of the large negative magnetoresistivity and zero field resistivity, we deduce the scattering times for electron-electron and electron-phonon interactions, as well as the effective channel width. Our findings confirm that the system under investigation serves as a tunable experimental platform for investigating hydrodynamic transport regimes at temperatures above 10 K.
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Submitted 22 September, 2023;
originally announced September 2023.
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Influence of illumination on the quantum lifetime in selectively doped single GaAs quantum wells with short-period AlAs/GaAs superlattice barriers
Authors:
A. A. Bykov,
D. V. Nomokonov,
A. V. Goran,
I. S. Strygin,
I. V. Marchishin,
A. K. Bakarov
Abstract:
The influence of illumination on a high mobility two-dimensional electron gas with high concentration of charge carriers is studied in selectively doped single GaAs quantum wells with short-period AlAs/GaAs superlattice barriers at a temperature T = 4.2 K in magnetic fields B < 2 T. It is shown that illumination at low temperatures in the studied heterostructures leads to an increase in the concen…
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The influence of illumination on a high mobility two-dimensional electron gas with high concentration of charge carriers is studied in selectively doped single GaAs quantum wells with short-period AlAs/GaAs superlattice barriers at a temperature T = 4.2 K in magnetic fields B < 2 T. It is shown that illumination at low temperatures in the studied heterostructures leads to an increase in the concentration, mobility, and quantum lifetime of electrons. An increase in the quantum lifetime due to illumination of single GaAs quantum wells with modulated superlattice doping is explained by a decrease in the effective concentration of remote ionized donors.
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Submitted 9 January, 2023;
originally announced January 2023.
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Diffusion of photo-excited holes in viscous electron fluid
Authors:
Yu. A. Pusep,
M. D. Teodoro,
V. Laurindo Jr.,
E. R. Cardozo de Oliveira,
G. M. Gusev,
A. K. Bakarov
Abstract:
The diffusion of photo-generated holes is studied in a high-mobility mesoscopic GaAs\ channel where electrons exhibit hydrodynamic properties. It is shown that the injection of holes into such an electron system leads to the formation of a hydrodynamic three-component mixture consisted of electrons and photo-generated heavy and light holes. The obtained results are analyzed within the framework of…
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The diffusion of photo-generated holes is studied in a high-mobility mesoscopic GaAs\ channel where electrons exhibit hydrodynamic properties. It is shown that the injection of holes into such an electron system leads to the formation of a hydrodynamic three-component mixture consisted of electrons and photo-generated heavy and light holes. The obtained results are analyzed within the framework of ambipolar diffusion, which reveals characteristics of a viscous flow. Both hole types exhibit similar hydrodynamic characteristics. In such a way the diffusion lengths, ambipolar diffusion coefficient and the effective viscosity of the electron-hole system are determined.
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Submitted 31 March, 2022;
originally announced April 2022.
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Temperature Damping of Magneto-Intersubband Resistance Oscillations in Magnetically Entangled Subbands
Authors:
Sara Abedi,
S. A. Vitkalov,
A. A. Bykov,
A. K. Bakarov
Abstract:
Magneto-intersubband resistance oscillations (MISO) of highly mobile 2D electrons in symmetric GaAs quantum wells with two populated subbands are studied in magnetic fields tilted from the normal to the 2D electron layer at different temperatures $T$. Decrease of MISO amplitude with temperature increase is observed. At moderate tilts the temperature decrease of MISO amplitude is consistent with de…
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Magneto-intersubband resistance oscillations (MISO) of highly mobile 2D electrons in symmetric GaAs quantum wells with two populated subbands are studied in magnetic fields tilted from the normal to the 2D electron layer at different temperatures $T$. Decrease of MISO amplitude with temperature increase is observed. At moderate tilts the temperature decrease of MISO amplitude is consistent with decrease of Dingle factor due to reduction of quantum electron lifetime at high temperatures. At large tilts new regime of strong MISO suppression with the temperature is observed. Proposed model relates this suppression to magnetic entanglement between subbands, leading to beating in oscillating density of states. The model yields corresponding temperature damping factor: $A_{MISO}(T)=X/\sinh(X)$, where $X=2��^2kTδf$ and $δf$ is difference frequency of oscillations of density of states in two subbands. This factor is in agreement with experiment. Fermi liquid enhancement of MISO amplitude is observed.
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Submitted 25 May, 2021;
originally announced May 2021.
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Viscous magnetotransport and Gurzhi effect in bilayer electron system
Authors:
G. M. Gusev,
A. S. Jaroshevich,
A. D. Levin,
Z. D. Kvon,
A. K. Bakarov
Abstract:
We observe a large negative magnetoresistance and a decrease of resistivity with increasing temperature, known as the Gurzhi effect, in a bilayer electron (BL) system formed by a wide GaAs quantum well. A hydrodynamic model for the single fluid transport parameters in narrow channels is employed and successfully describes our experimental findings.
We find that the electron-electron scattering i…
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We observe a large negative magnetoresistance and a decrease of resistivity with increasing temperature, known as the Gurzhi effect, in a bilayer electron (BL) system formed by a wide GaAs quantum well. A hydrodynamic model for the single fluid transport parameters in narrow channels is employed and successfully describes our experimental findings.
We find that the electron-electron scattering in the bilayer is more intensive in comparison with a single-band well (SW).
The hydrodynamic assumption implies a strong dependence on boundary conditions, which can be characterized by slip length, describing the behavior of a liquid near the edge. Our results reveal that slip length in a BL is shorter than in a SW, and that the BL system goes deeper into the hydrodynamic regime. This is in agreement with the model proposed where the slip length is of the order of the electron-electron mean free path.
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Submitted 10 February, 2021;
originally announced February 2021.
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Dependences of the Transport Scattering Time and Quantum Lifetime on the Two-Dimensional Electron Gas Density in Modulation-Doped Single GaAs Quantum Wells with AlAs/GaAs Short-Period Superlattice Barriers
Authors:
A. A. Bykov,
I. S. Strygin,
A. V. Goran,
D. V. Nomokonov,
A. K. Bakarov
Abstract:
The dependences of the transport scattering time τt, quantum lifetime τq, and their ratio τt/τq on the density ne of the electron gas in modulation-doped single GaAs quantum wells with AlAs/GaAs short-period super-lattice barriers are investigated. The experimental dependences are explained in terms of electron scattering by remote ionized donors with an effective two-dimensional concentration n*R…
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The dependences of the transport scattering time τt, quantum lifetime τq, and their ratio τt/τq on the density ne of the electron gas in modulation-doped single GaAs quantum wells with AlAs/GaAs short-period super-lattice barriers are investigated. The experimental dependences are explained in terms of electron scattering by remote ionized donors with an effective two-dimensional concentration n*R and background impurities with a three-dimensional concentration nB. An expression for n*R(ne) is obtained including the contribution of X-valley electrons localized in AlAs layers to the suppression of scattering by the random potential of remote donors. It is shown that the experimentally observed abrupt increase in τt and τq with an increase in ne above a certain critical value nec is related to a decrease in n*R. It is established that the drop in τt/τq observed for electron densities ne > nec occurs because scattering by the random potential of background impurities in this two-dimensional system with a decrease in n*R limits an increase in τt more considerably than an increase in τq.
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Submitted 4 January, 2021;
originally announced January 2021.
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Nonlinear AC and DC Conductivities in a Two-Subband n-GaAs/AlAs Heterostructure
Authors:
I. L. Drichko,
I. Yu. Smirnov,
A. K. Bakarov,
A. A. Bykov,
A. A. Dmitriev,
Yu. M. Galperin
Abstract:
The DC and AC conductivities of the n-GaAs/AlAs heterostructure with two filled size quantization levels are studied within a wide magnetic field range. The electron spectrum of such heterostructure is characterized by two subbands (symmetric $S$ and antisymmetric $AS$), separated by the band gap $Δ_{12}=15.5$ meV. It is shown that, in the linear regime at the applied magnetic field $B >3$ T, the…
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The DC and AC conductivities of the n-GaAs/AlAs heterostructure with two filled size quantization levels are studied within a wide magnetic field range. The electron spectrum of such heterostructure is characterized by two subbands (symmetric $S$ and antisymmetric $AS$), separated by the band gap $Δ_{12}=15.5$ meV. It is shown that, in the linear regime at the applied magnetic field $B >3$ T, the system exhibits oscillations corresponding to the integer quantum Hall effect. A quite complicated pattern of such oscillations is well interpreted in terms of transitions between Landau levels related to different subbands. At $B <1$ T, magneto-intersubband resistance oscillations (MISOs) are observed. An increase in the conductivity with the electric current flowing across the sample or in the intensity of the surface acoustic wave (SAW) in the regime of the integer quantum Hall effect is determined by an increase in the electron gas temperature. In the case of intersubband transitions, it is found that nonlinearity cannot be explained by heating. At the same time, the decrease in the AC conductivity with increasing SAW electric field is independent of frequency, but the corresponding behavior does not coincide with that corresponding to the dependence of the DC conductivity on the Hall voltage $E_y$.
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Submitted 3 September, 2020;
originally announced September 2020.
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Observation of High Harmonics of the Cyclotron Resonance in Microwave Transmission of a High-Mobility Two-Dimensional Electron System
Authors:
M. L. Savchenko,
A. Shuvaev,
I. A. Dmitriev,
A. A. Bykov,
A. K. Bakarov,
Z. D. Kvon,
A. Pimenov
Abstract:
We report an observation of magnetooscillations of the microwave power transmitted through the high mobility two-dimensional electron system hosted by a GaAs quantum well. The oscillations reflect an enhanced absorption of radiation at high harmonics of the cyclotron resonance and follow simultaneously measured microwave-induced resistance oscillations (MIRO) in the dc transport. While the relativ…
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We report an observation of magnetooscillations of the microwave power transmitted through the high mobility two-dimensional electron system hosted by a GaAs quantum well. The oscillations reflect an enhanced absorption of radiation at high harmonics of the cyclotron resonance and follow simultaneously measured microwave-induced resistance oscillations (MIRO) in the dc transport. While the relative amplitude (up to 1%) of the transmittance oscillations appears to be small, they represent a significant (>50%) modulation of the absorption coefficient. The analysis of obtained results demonstrates that the low-B decay, magnitude, and polarization dependence of the transmittance oscillations accurately follow the theory describing photon-assisted scattering between distant disorder-broadened Landau levels. The extracted sample parameters reasonably well describe the concurrently measured MIRO. Our results provide an insight into the MIRO polarization immunity problem and pave the way to probe diverse high-frequency transport properties of high-mobility systems using precise transmission measurements.
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Submitted 25 August, 2020;
originally announced August 2020.
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Electrical control of spin relaxation anisotropy during drift transport in a two-dimensional electron gas
Authors:
F. G. G. Hernandez,
G. J. Ferreira,
M. Luengo-Kovac,
V. Sih,
N. M. Kawahala,
G. M. Gusev,
A. K. Bakarov
Abstract:
Spin relaxation was studied in a two-dimensional electron gas confined in a wide GaAs quantum well. Recently, the control of the spin relaxation anisotropy by diffusive motion was first shown in D. Iizasa et al., arXiv:2006.08253 (2020). Here, we demonstrate electrical control by drift transport in a system with two-subbands occupied. The combined effect of in-plane and gate voltages was investiga…
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Spin relaxation was studied in a two-dimensional electron gas confined in a wide GaAs quantum well. Recently, the control of the spin relaxation anisotropy by diffusive motion was first shown in D. Iizasa et al., arXiv:2006.08253 (2020). Here, we demonstrate electrical control by drift transport in a system with two-subbands occupied. The combined effect of in-plane and gate voltages was investigated using time-resolved Kerr rotation. The measured relaxation time present strong anisotropy with respect to the transport direction. For an in-plane accelerating electric field along $\left[110\right]$, the lifetime was strongly suppressed irrespective of the applied gate voltage. Remarkably, for transport along $\left[1\bar{1}0\right]$, the data shows spin lifetime that was gate-dependent and longer than in the $\left[110\right]$ direction regardless of the in-plane voltage. In agreement, independent results of anisotropic spin precession frequencies are also presented. Nevertheless, the long spin lifetime, strong anisotropy and drift response seen in the data are beyond the existing models for spin drift and diffusion.
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Submitted 31 August, 2020; v1 submitted 20 July, 2020;
originally announced July 2020.
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Manifestations of classical size effect and electronic viscosity in the magnetoresistance of narrow two-dimensional conductors: Theory and experiment
Authors:
O. E. Raichev,
G. M. Gusev,
A. D. Levin,
A. K. Bakarov
Abstract:
We develop a classical kinetic theory of magnetotransport of 2D electrons in narrow channels with partly diffusive boundary scattering and apply it to description of magnetoresistance measured in the temperature interval 4.2-30 K in long mesoscopic bars fabricated from high-purity GaAs quantum well structures. Both experiment and theory demonstrate a number of characteristic features in the longit…
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We develop a classical kinetic theory of magnetotransport of 2D electrons in narrow channels with partly diffusive boundary scattering and apply it to description of magnetoresistance measured in the temperature interval 4.2-30 K in long mesoscopic bars fabricated from high-purity GaAs quantum well structures. Both experiment and theory demonstrate a number of characteristic features in the longitudinal and Hall resistances caused by the size effect in two dimensions owing to the high ballisticity of the transport. In addition to the features described previously, we also reveal a change in the slope of the first derivative of magnetoresistance when the cyclotron orbit diameter equals to half of the channel width. These features are suppressed with increasing temperature as a result of the electronic viscosity due to electron-electron interaction. By comparing theory and experiment, we determine the characteristic time of relaxation of angular distribution of electrons caused by electron-electron scattering.
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Submitted 22 June, 2020;
originally announced June 2020.
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Experimental analysis of the spin-orbit coupling dependence on the drift velocity of a spin packet
Authors:
N. M . Kawahala,
F. C. D. Moraes,
G. M. Gusev,
A. K. Bakarov,
F. G. G. Hernandez
Abstract:
Spin transport was studied in a two-dimensional electron gas hosted in a wide GaAs quantum well occupying two subbands. Using space and time Kerr rotation microscopy to image drifting spin packets under an in-plane accelerating electric field, optical injection and detection of spin polarization were achieved in a pump-probe configuration. The experimental data exhibited high spin mobility and lon…
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Spin transport was studied in a two-dimensional electron gas hosted in a wide GaAs quantum well occupying two subbands. Using space and time Kerr rotation microscopy to image drifting spin packets under an in-plane accelerating electric field, optical injection and detection of spin polarization were achieved in a pump-probe configuration. The experimental data exhibited high spin mobility and long spin lifetimes allowing to obtain the spin-orbit fields as a function of the spin velocities. Surprisingly, above moderate electric fields of 0.4V/cm with velocities higher than 2$μ$m/ns, we observed a dependence of both bulk and structure-related spin-orbit interactions on the velocity magnitude. A remarkable feature is the increase of the cubic Dresselhaus term to approximately half of the linear coupling when the velocity is raised to 10$μ$m/ns. In contrast, the Rashba coupling for both subbands decreases to about half of its value in the same range. These results yield new information for the application of drift models in spin-orbit fields and about limitations for the operation of spin transistors.
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Submitted 8 June, 2020; v1 submitted 30 May, 2020;
originally announced June 2020.
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Stokes flow around an obstacle in viscous two-dimensional electron liquid
Authors:
G. M. Gusev,
A. S. Jaroshevich,
A. D. Levin,
Z. D. Kvon,
A. K. Bakarov
Abstract:
The electronic analog of the Poiseuille flow is the transport in a narrow channel with disordered edges that scatter electrons in a diffuse way. In the hydrodynamic regime, the resistivity decreases with temperature, referred to as the Gurzhi effect, distinct from conventional Ohmic behaviour. We studied experimentally an electronic analog of the Stokes flow around a disc immersed in a two-dimensi…
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The electronic analog of the Poiseuille flow is the transport in a narrow channel with disordered edges that scatter electrons in a diffuse way. In the hydrodynamic regime, the resistivity decreases with temperature, referred to as the Gurzhi effect, distinct from conventional Ohmic behaviour. We studied experimentally an electronic analog of the Stokes flow around a disc immersed in a two-dimensional viscous liquid. The circle obstacle results in an additive contribution to resistivity. If specular boundary conditions apply, it is no longer possible to detect Poiseuille type flow and the Gurzhi effect. However, in flow through a channel with a circular obstacle, the resistivity decreases with temperature. By tuning the temperature, we observed the transport signatures of the ballistic and hydrodynamic regimes on the length scale of disc size. Our experimental results confirm theoretical predictions.
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Submitted 12 May, 2020;
originally announced May 2020.
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AC and DC Conductivities in an n-GaAs/AlAs Heterostructure with a Wide Quantum Well in the Integer Quantum Hall Effect Regime
Authors:
A. A. Dmitriev,
I. L. Drichko,
I. Yu. Smirnov,
A. K. Bakarov,
A. A. Bykov
Abstract:
The direct-current (dc) $σ_{xx}^{dc}$ and alternating-current (ac) $σ_{xx}^{ac}=σ_1-iσ_2$ conductivities of a wide (46 nm) GaAs quantum well with the bilayer electron density distribution are measured. It is found that the magnetic field dependence of $σ_{xx}$ exhibits three sets of oscillations related to the transitions between Landau levels in symmetric and antisymmetric subbands and with the t…
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The direct-current (dc) $σ_{xx}^{dc}$ and alternating-current (ac) $σ_{xx}^{ac}=σ_1-iσ_2$ conductivities of a wide (46 nm) GaAs quantum well with the bilayer electron density distribution are measured. It is found that the magnetic field dependence of $σ_{xx}$ exhibits three sets of oscillations related to the transitions between Landau levels in symmetric and antisymmetric subbands and with the transitions occurring owing to the Zeeman splitting of these subbands. The analysis of the frequency dependence of the ac conductivity and the $σ_1 / σ_2$ ratio demonstrates that the conductivity at the minima of oscillations is determined by the hopping mechanism.
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Submitted 19 December, 2019;
originally announced December 2019.
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Viscous transport and Hall viscosity in a two-dimensional electron system
Authors:
G. M. Gusev,
A. D. Levin,
E. V. Levinson,
A. K. Bakarov
Abstract:
Hall viscosity is a nondissipative response function describing momentum transport in two-dimensional (2D) systems with broken time-reversal symmetry. In the classical regime, Hall viscosity contributes to the viscous flow of 2D electrons in the presence of a magnetic field. We observe a pronounced, negative Hall resistivity at low magnetic field in a mesoscopic size, two-dimensional electron syst…
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Hall viscosity is a nondissipative response function describing momentum transport in two-dimensional (2D) systems with broken time-reversal symmetry. In the classical regime, Hall viscosity contributes to the viscous flow of 2D electrons in the presence of a magnetic field. We observe a pronounced, negative Hall resistivity at low magnetic field in a mesoscopic size, two-dimensional electron system, which is attributed to Hall viscosity in the inhomogeneous charge flow. Experimental results supported by a theoretical analysis confirm that the conditions for observation of Hall viscosity are correlated with predictions.
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Submitted 15 October, 2018;
originally announced October 2018.
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Vorticity induced negative nonlocal resistance in viscous two-dimensional electron system
Authors:
A. D. Levin,
G. M. Gusev,
E. V. Levinson,
Z. D. Kvon,
A. K. Bakarov
Abstract:
We report non-local electrical measurements in a mesoscopic size two-dimensional (2D) electron gas in a GaAs quantum well in a hydrodynamic regime. Viscous electric flow is expected to be dominant when electron-electron collisions occur more often than the impurity or phonon scattering events. We observe a negative nonlocal resistance and attribute it to the formation of whirlpools in the electron…
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We report non-local electrical measurements in a mesoscopic size two-dimensional (2D) electron gas in a GaAs quantum well in a hydrodynamic regime. Viscous electric flow is expected to be dominant when electron-electron collisions occur more often than the impurity or phonon scattering events. We observe a negative nonlocal resistance and attribute it to the formation of whirlpools in the electron flow. We use the different nonlocal transport geometries and compare the results with a theory demonstrating the significance of hydrodynamics in mesoscopic samples.
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Submitted 15 October, 2018;
originally announced October 2018.
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Optically-detected long-lived spin coherence in multilayer systems: Double and triple quantum wells
Authors:
S. Ullah,
G. M. Gusev,
A. K. Bakarov,
F. G. G. Hernandez
Abstract:
In this contribution, we investigated the spin coherence of high-mobility dense two-dimensional electron gases confined in multilayer systems. The dynamics of optically-induced spin polarization was experimentally studied employing the time-resolved Kerr rotation and resonant spin amplification techniques. For both the double and triple quantum wells doped beyond the metal-insulator transition, wh…
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In this contribution, we investigated the spin coherence of high-mobility dense two-dimensional electron gases confined in multilayer systems. The dynamics of optically-induced spin polarization was experimentally studied employing the time-resolved Kerr rotation and resonant spin amplification techniques. For both the double and triple quantum wells doped beyond the metal-insulator transition, where the spin coherence is greatly suppressed, we found remarkably long spin lifetimes limited by the Dyakonov-Perel mechanism and spin hopping process between the donor sites as well as the spread of ensemble g-factor. The double quantum well structure yields a spin lifetime of 6.25 ns at T = 5 K while the triple quantum well shows a spin lifetime exceeding 25 ns at T = 8 K.
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Submitted 8 June, 2018;
originally announced June 2018.
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Viscous electron flow in mesoscopic two-dimensional electron gas
Authors:
G. M. Gusev,
A. D. Levin,
E. V. Levinson,
A. K. Bakarov
Abstract:
We report electrical and magneto transport measurements in mesoscopic size, two-dimensional (2D) electron gas in a GaAs quantum well. Remarkably, we find that the probe configuration and sample geometry strongly affects the temperature evolution of local resistance. We attribute all transport properties to the presence of hydrodynamic effects. Experimental results confirm the theoretically predict…
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We report electrical and magneto transport measurements in mesoscopic size, two-dimensional (2D) electron gas in a GaAs quantum well. Remarkably, we find that the probe configuration and sample geometry strongly affects the temperature evolution of local resistance. We attribute all transport properties to the presence of hydrodynamic effects. Experimental results confirm the theoretically predicted significance of viscous flow in mesoscopic devices.
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Submitted 11 June, 2018; v1 submitted 26 February, 2018;
originally announced February 2018.
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Kinetics of structural changes on GaSb(001) singular and vicinal surfaces during the UHV annealing
Authors:
A. V. Vasev,
M. A. Putyato,
V. V. Preobrazhenskii,
A. K. Bakarov,
A. I. Toropov
Abstract:
The dynamics of processes of antimony desorption was investigated on the singular and vicinal GaSb(001) surface by RHEED method. The role of the terraces edges was determined during antimony evaporation in Langmuir desorption mode. It is shown that the structural transition (2x5) -> (1x3) is a complex of two transitions - order -> disorder and disorder -> order. The influence of the degree of surf…
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The dynamics of processes of antimony desorption was investigated on the singular and vicinal GaSb(001) surface by RHEED method. The role of the terraces edges was determined during antimony evaporation in Langmuir desorption mode. It is shown that the structural transition (2x5) -> (1x3) is a complex of two transitions - order -> disorder and disorder -> order. The influence of the degree of surface miscut from the singular face on the dimension of the transition (2x5) -> DO was studied. The activation energies of structural transitions ex(2x5) -> (2x5), (2x5) -> DO and DO -> (1x3) on singular and vicinal faces GaSb(001) were determined.
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Submitted 30 January, 2018;
originally announced January 2018.
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Tailoring multilayer quantum wells for spin devices
Authors:
S. Ullah,
G. M. Gusev,
A. K. Bakarov,
F. G. G. Hernandez
Abstract:
The electron spin dynamics in multilayer GaAs/AlGaAs quantum wells, containing high-mobility dense two-dimensional electron gases, have been studied using time-resolved Kerr rotation and resonant spin amplification techniques. The electron spin dynamics was regulated through the wave function engineering and quantum confinement in multilayer quantum wells. We observed the spin coherence with a rem…
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The electron spin dynamics in multilayer GaAs/AlGaAs quantum wells, containing high-mobility dense two-dimensional electron gases, have been studied using time-resolved Kerr rotation and resonant spin amplification techniques. The electron spin dynamics was regulated through the wave function engineering and quantum confinement in multilayer quantum wells. We observed the spin coherence with a remarkably long dephasing time T2* > 13 ns for the structure doped beyond metal-insulator transition. Dyakonov-Perel spin relaxation mechanism, as well as the inhomogeneity of electron g-factor, was suggested as the major limiting factors for the spin coherence time. In the metallic regime, we found that the electron-electron collisions become dominant over microscopic scattering on the electron spin relaxation with the Dyakonov-Perel mechanism. Furthermore, the data analysis indicated that in our structure, due to the spin relaxation anisotropy, Dyakonov-Perel spin relaxation mechanism is efficient for the spins oriented in-plane and suppressed along the quantum well growth direction resulting in the enhancement of T2*. Our findings, namely, long-lived spin coherence persisting up to about room temperature, spin polarization decay time with and without a magnetic field, the spin-orbit field, single electron relaxation time, transport scattering time, and the electron-electron Coulomb scattering time highlight the attractiveness of n-doped multilayer systems for spin devices.
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Submitted 13 January, 2018;
originally announced January 2018.
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Robustness of spin coherence of the exciton bound to neutral donor states in multilayer system
Authors:
S. Ullah,
F. C. D. Moraes,
G. M. Gusev,
A. K. Bakarov,
F. G. G. Hernandez
Abstract:
We address the temperature influence on the precessional motion of electron spins under transverse magnetic field, studied in a GaAs/AlGaAs triple quantum wells, using pump-probe Kerr rotation. In the presence of an applied in-plane magnetic field the TRKR measurements show the robustness of carrier's spin polarization against temperature which can be easily traced in an extended range up to 250 K…
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We address the temperature influence on the precessional motion of electron spins under transverse magnetic field, studied in a GaAs/AlGaAs triple quantum wells, using pump-probe Kerr rotation. In the presence of an applied in-plane magnetic field the TRKR measurements show the robustness of carrier's spin polarization against temperature which can be easily traced in an extended range up to 250 K. By tuning the pump-probe wavelength to the exciton bound to a neutral donor transition, we observed a remarkably long-lasting spin coherence (with dephasing time T2* > 14 ns) limited by the spin hopping process and exchange interaction between the donor sites as well as the ensemble spread of g-factor. The temperature dependent spin dephasing time revealed a double linear dependence due to the different relaxation mechanisms active at respective temperature ranges. We observed that the increase of sample temperature from 5 K to 250 K, leads to a strong T2* reduction by almost 98%/97% for the excitation wavelengths of 823/821 nm. Furthermore, we noticed that the temperature increase not only causes the reduction of spin lifetime but can also lead to the variation of electron g-factor. Additionally, the spin dynamics was studied through the dependencies on the applied magnetic field and optical pump power.
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Submitted 17 May, 2018; v1 submitted 13 January, 2018;
originally announced January 2018.
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Microwave-induced zero-resistance states in a high-mobility two-subband electron system
Authors:
A. A. Bykov,
A. V. Goran,
A. K. Bakarov
Abstract:
In this study we used selectively-doped GaAs/AlAs heterostructure to fabricate a high-mobility two-subband electronic system with substantially different concentration of electrons in subbands. We observe microwave photoresistance at high numbers of magneto-intersubband oscillations (MISO). The system under study demonstrates microwave-induced resistance oscillations (MIRO) and MISO interference.…
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In this study we used selectively-doped GaAs/AlAs heterostructure to fabricate a high-mobility two-subband electronic system with substantially different concentration of electrons in subbands. We observe microwave photoresistance at high numbers of magneto-intersubband oscillations (MISO). The system under study demonstrates microwave-induced resistance oscillations (MIRO) and MISO interference. MIRO in the studied two-subband system appear in lower magnetic fields comparing to MISO. This is an indication of some unknown mechanism that exists in the two-subband system and is responsible for MISO amplitude damping in low magnetic fields, while it does not affect the MIRO amplitude. Zero resistance states (ZRS) appear in the system under study under microwave irradiation in the narrow range of magnetic fields near the MISO maximum.
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Submitted 26 December, 2017;
originally announced December 2017.
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Gate control of the spin mobility through the modification of the spin-orbit interaction in two-dimensional systems
Authors:
M. Luengo-Kovac,
F. C. D. Moraes,
G. J. Ferreira,
A. S. L. Ribeiro,
G. M. Gusev,
A. K. Bakarov,
V. Sih,
F. G. G. Hernandez
Abstract:
Spin drag measurements were performed in a two-dimensional electron system set close to the crossed spin helix regime and coupled by strong intersubband scattering. In a sample with uncommon combination of long spin lifetime and high charge mobility, the drift transport allows us to determine the spin-orbit field and the spin mobility anisotropies. We used a random walk model to describe the syste…
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Spin drag measurements were performed in a two-dimensional electron system set close to the crossed spin helix regime and coupled by strong intersubband scattering. In a sample with uncommon combination of long spin lifetime and high charge mobility, the drift transport allows us to determine the spin-orbit field and the spin mobility anisotropies. We used a random walk model to describe the system dynamics and found excellent agreement for the Rashba and Dresselhaus couplings. The proposed two-subband system displays a large tuning lever arm for the Rashba constant with gate voltage, which provides a new path towards a spin transistor. Furthermore, the data shows large spin mobility controlled by the spin-orbit constants setting the field along the direction perpendicular to the drift velocity. This work directly reveals the resistance experienced in the transport of a spin-polarized packet as a function of the strength of anisotropic spin-orbit fields.
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Submitted 18 May, 2017; v1 submitted 24 March, 2017;
originally announced March 2017.
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Large anisotropic spin relaxation time of exciton bound to donor states in triple quantum wells
Authors:
S. Ullah,
G. M. Gusev,
A. K. Bakarov,
F. G. G. Hernandez
Abstract:
We have studied the spin dynamics of a dense two-dimensional electron gas confined in a GaAs/AlGaAs triple quantum well by using time-resolved Kerr rotation and resonant spin amplification. Strong anisotropy of the spin relaxation time up to a factor of 10 was found between the electron spins oriented in-plane and out-of-plane when the excitation energy is tuned to an exciton bound to neutral dono…
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We have studied the spin dynamics of a dense two-dimensional electron gas confined in a GaAs/AlGaAs triple quantum well by using time-resolved Kerr rotation and resonant spin amplification. Strong anisotropy of the spin relaxation time up to a factor of 10 was found between the electron spins oriented in-plane and out-of-plane when the excitation energy is tuned to an exciton bound to neutral donor transition. We model this anisotropy using an internal magnetic field and the inhomogeneity of the electron g-factor. The data analysis allows us to determine the direction and magnitude of this internal field in the range of a few mT for our studied structure, which decreases with the sample temperature and optical power. The dependence of the anisotropic spin relaxation was directly measured as a function of several experimental parameters: excitation wavelength, sample temperature, pump-probe time delay, and pump power.
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Submitted 2 May, 2017; v1 submitted 21 March, 2017;
originally announced March 2017.
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Magnetophonon oscillations of thermoelectric power and combined resonance in two-subband electron systems
Authors:
A. D. Levin,
G. M. Gusev,
O. E. Raichev,
A. K. Bakarov
Abstract:
By measuring the thermoelectric effect in high-mobility quantum wells with two occupied subbands in perpendicular magnetic field, we detect magnetophonon oscillations due to interaction of electrons with acoustic phonons. These oscillations contain specific features identified as combined resonances caused by intersubband phonon-assisted transitions of electrons in the presence of Landau quantizat…
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By measuring the thermoelectric effect in high-mobility quantum wells with two occupied subbands in perpendicular magnetic field, we detect magnetophonon oscillations due to interaction of electrons with acoustic phonons. These oscillations contain specific features identified as combined resonances caused by intersubband phonon-assisted transitions of electrons in the presence of Landau quantization. The quantum theory of phonon-drag magnetothermoelectric effect, generalized to the case of multi-subband occupation, describes our experimental findings.
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Submitted 16 September, 2016;
originally announced September 2016.
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Macroscopic transport of a current-induced spin polarization
Authors:
S. Ullah,
G. J. Ferreira,
G. M. Gusev,
A. K. Bakarov,
F. G. G. Hernandez
Abstract:
Experimental studies of spin transport in a two-dimensional electron gas hosted by a triple GaAs/AlGaAs quantum well are reported. Using time-resolved Kerr rotation, we observed the precession of the spin polarization about a current-controlled spin-orbit magnetic field. Spatially-resolved imaging showed a large variation of the electron g-factor and the drift transport of coherent electron spins…
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Experimental studies of spin transport in a two-dimensional electron gas hosted by a triple GaAs/AlGaAs quantum well are reported. Using time-resolved Kerr rotation, we observed the precession of the spin polarization about a current-controlled spin-orbit magnetic field. Spatially-resolved imaging showed a large variation of the electron g-factor and the drift transport of coherent electron spins over distances exceeding half-millimetre in a direction transverse to the electric field.
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Submitted 24 August, 2016;
originally announced August 2016.
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Magnetocapacitance oscillations and thermoelectric effect in two-dimensional electron gas irradiated by microwaves
Authors:
A. D. Levin,
G. M. Gusev,
O. E. Raichev,
Z. S. Momtaz,
A. K. Bakarov
Abstract:
To study the influence of microwave irradiation on two-dimensional electrons, we apply a method based on capacitance measurements in GaAs quantum well samples where the gate covers a central part of the layer. We find that the capacitance oscillations at high magnetic fields, caused by the oscillations of thermodynamic density of states, are not essentially modified by microwaves. However, in the…
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To study the influence of microwave irradiation on two-dimensional electrons, we apply a method based on capacitance measurements in GaAs quantum well samples where the gate covers a central part of the layer. We find that the capacitance oscillations at high magnetic fields, caused by the oscillations of thermodynamic density of states, are not essentially modified by microwaves. However, in the region of fields below 1 Tesla, we observe another set of oscillation, with the period and the phase identical to those of microwave induced resistance oscillations. The phenomenon of microwave induced capacitance oscillations is explained in terms of violation of the Einstein relation between conductivity and the diffusion coefficient in the presence of microwaves, which leads to a dependence of the capacitor charging on the anomalous conductivity. We also observe microwave-induced oscillations in the capacitive response to periodic variations of external heating. These oscillations appear due to the thermoelectric effect and are in antiphase with microwave induced resistance oscillations because of the Corbino-like geometry of our experimental setup.
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Submitted 21 July, 2016;
originally announced July 2016.
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Macroscopic transverse drift of long current-induced spin coherence in two-dimensional electron gases
Authors:
F. G. G. Hernandez,
S. Ullah,
G. J. Ferreira,
N. M. Kawahala,
G. M. Gusev,
A. K. Bakarov
Abstract:
We imaged the transport of current-induced spin coherence in a two-dimensional electron gas confined in a triple quantum well. Nonlocal Kerr rotation measurements, based on the optical resonant amplification of the electrically-induced polarization, revealed a large spatial variation of the electron g factor and the efficient generation of a current controlled spin-orbit field in a macroscopic Hal…
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We imaged the transport of current-induced spin coherence in a two-dimensional electron gas confined in a triple quantum well. Nonlocal Kerr rotation measurements, based on the optical resonant amplification of the electrically-induced polarization, revealed a large spatial variation of the electron g factor and the efficient generation of a current controlled spin-orbit field in a macroscopic Hall bar device. We observed coherence times in the nanoseconds range transported beyond half-millimeter distances in a direction transverse to the applied electric field. The measured long spin transport length can be explained by two material properties: large mean free path for charge diffusion in clean systems and enhanced spin-orbit coefficients in the triple well.
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Submitted 14 July, 2016; v1 submitted 22 May, 2016;
originally announced May 2016.
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Piezoelectric electromechanical coupling in nanomechanical resonators with two-dimensional electron gas
Authors:
A. A. Shevyrin,
A. G. Pogosov,
A. K. Bakarov,
A. A. Shklyaev
Abstract:
The electrical response of two-dimensional electron gas to vibrations of a nanomechanical cantilever containing it is studied. Vibrations of perpendicularly oriented cantilevers are experimentally shown to change oppositely the conductivity near their bases. This indicates the piezoelectric nature of electromechanical coupling. A physical model is developed, which quantitatively explains the exper…
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The electrical response of two-dimensional electron gas to vibrations of a nanomechanical cantilever containing it is studied. Vibrations of perpendicularly oriented cantilevers are experimentally shown to change oppositely the conductivity near their bases. This indicates the piezoelectric nature of electromechanical coupling. A physical model is developed, which quantitatively explains the experiment. It shows that the main origin of the conductivity change is a rapid change in the mechanical stress on the boundary between suspended and non-suspended areas, rather than the stress itself.
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Submitted 21 April, 2016;
originally announced April 2016.
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Monolithically integrated single quantum dots coupled to bowtie nanoantennas
Authors:
A. A. Lyamkina,
K. Schraml,
A. Regler,
M. Schalk,
A. K. Bakarov,
A. I. Toropov,
S. P. Moshchenko,
M. Kaniber
Abstract:
Deterministically integrating semiconductor quantum emitters with plasmonic nano-devices paves the way towards chip-scale integrable, true nanoscale quantum photonics technologies. For this purpose, stable and bright semiconductor emitters are needed, which moreover allow for CMOS-compatibility and optical activity in the telecommunication band. Here, we demonstrate strongly enhanced light-matter…
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Deterministically integrating semiconductor quantum emitters with plasmonic nano-devices paves the way towards chip-scale integrable, true nanoscale quantum photonics technologies. For this purpose, stable and bright semiconductor emitters are needed, which moreover allow for CMOS-compatibility and optical activity in the telecommunication band. Here, we demonstrate strongly enhanced light-matter coupling of single near-surface ($<10\,nm$) InAs quantum dots monolithically integrated into electromagnetic hot-spots of sub-wavelength sized metal nanoantennas. The antenna strongly enhances the emission intensity of single quantum dots by up to $\sim16\times$, an effect accompanied by an up to $3.4\times$ Purcell-enhanced spontaneous emission rate. Moreover, the emission is strongly polarised along the antenna axis with degrees of linear polarisation up to $\sim85\,\%$. The results unambiguously demonstrate the efficient coupling of individual quantum dots to state-of-the-art nanoantennas. Our work provides new perspectives for the realisation of quantum plasmonic sensors, step-changing photovoltaic devices, bright and ultrafast quantum light sources and efficent nano-lasers.
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Submitted 23 March, 2016;
originally announced March 2016.
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Magneto-intersubband resistance oscillations in GaAs quantum wells placed in a tilted magnetic field
Authors:
William Mayer,
Jesse Kanter,
Javad Shabani,
Sergey Vitkalov,
A. K. Bakarov,
A. A. Bykov
Abstract:
The magnetotransport of highly mobile 2D electrons in wide GaAs single quantum wells with three populated subbands placed in titled magnetic fields is studied. The bottoms of the lower two subbands have nearly the same energy while the bottom of the third subband has a much higher energy ($E_1\approx E_2<<E_3$). At zero in-plane magnetic fields magneto-intersubband oscillations (MISO) between the…
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The magnetotransport of highly mobile 2D electrons in wide GaAs single quantum wells with three populated subbands placed in titled magnetic fields is studied. The bottoms of the lower two subbands have nearly the same energy while the bottom of the third subband has a much higher energy ($E_1\approx E_2<<E_3$). At zero in-plane magnetic fields magneto-intersubband oscillations (MISO) between the $i^{th}$ and $j^{th}$ subbands are observed and obey the relation $Δ_{ij}=E_j-E_i=k\cdot\hbarω_c$, where $ω_c$ is the cyclotron frequency and $k$ is an integer. An application of in-plane magnetic field produces dramatic changes in MISO and the corresponding electron spectrum. Three regimes are identified. At $\hbarω_c \ll Δ_{12}$ the in-plane magnetic field increases considerably the gap $Δ_{12}$, which is consistent with the semi-classical regime of electron propagation. In contrast at strong magnetic fields $\hbarω_c \gg Δ_{12}$ relatively weak oscillating variations of the electron spectrum with the in-plane magnetic field are observed. At $\hbarω_c \approx Δ_{12}$ the electron spectrum undergoes a transition between these two regimes through magnetic breakdown. In this transition regime MISO with odd quantum number $k$ terminate, while MISO corresponding to even $k$ evolve $continuously$ into the high field regime corresponding to $\hbarω_c \gg Δ_{12}$
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Submitted 8 March, 2016;
originally announced March 2016.
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Long-lived nanosecond spin coherence in high-mobility 2DEGs confined in double and triple quantum wells
Authors:
S. Ullah,
G. M. Gusev,
A. K. Bakarov,
F. G. G. Hernandez
Abstract:
We investigated the spin coherence of high-mobility two-dimensional electron gases confined in multilayer GaAs quantum wells. The dynamics of the spin polarization was optically studied using pump-probe techniques: time-resolved Kerr rotation and resonant spin amplification. For double and triple quantum wells doped beyond the metal-to-insulator transition, the spin-orbit interaction was tailored…
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We investigated the spin coherence of high-mobility two-dimensional electron gases confined in multilayer GaAs quantum wells. The dynamics of the spin polarization was optically studied using pump-probe techniques: time-resolved Kerr rotation and resonant spin amplification. For double and triple quantum wells doped beyond the metal-to-insulator transition, the spin-orbit interaction was tailored by the sample parameters of structural symmetry (Rashba constant), width and electron density (Dresselhaus linear and cubic constants) which allows us to attain long dephasing times in the nanoseconds range. The determination of the scales: transport scattering time, single-electron scattering time, electron-electron scattering time, and spin polarization decay time further supports the possibility of using n-doped multilayer systems for developing spintronic devices.
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Submitted 17 May, 2016; v1 submitted 15 December, 2015;
originally announced December 2015.
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Microwave-induced magnetooscillations and signatures of zero-resistance states in phonon-drag voltage in two-dimensional electron systems
Authors:
A. D. Levin,
Z. S. Momtaz,
G. M. Gusev,
O. E. Raichev,
A. K. Bakarov
Abstract:
We observe the phonon-drag voltage oscillations correlating with the resistance oscillations under microwave irradiation in a two-dimensional electron gas in perpendicular magnetic field. This phenomenon is explained by the influence of dissipative resistivity modified by microwaves on the phonon-drag voltage perpendicular to the phonon flux. When the lowest-order resistance minima evolve into zer…
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We observe the phonon-drag voltage oscillations correlating with the resistance oscillations under microwave irradiation in a two-dimensional electron gas in perpendicular magnetic field. This phenomenon is explained by the influence of dissipative resistivity modified by microwaves on the phonon-drag voltage perpendicular to the phonon flux. When the lowest-order resistance minima evolve into zero-resistance states, the phonon-drag voltage demonstrates sharp features suggesting that current domains associated with these states can exist in the absence of external dc driving.
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Submitted 24 November, 2015;
originally announced November 2015.
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Microwave induced nonlocal transport in two-dimensional electron system
Authors:
A. D. Levin,
Z. S. Momtaz,
G. M. Gusev,
A. K. Bakarov
Abstract:
We observe microwave induced nonlocal resistance in magnetotransport in single and bilayer electronic systems. The obtained results provide evidence for an edge state current stabilized by microwave irradiation due to nonlinear resonances. Our observation are closely related to microwave induced oscillations and zero resistance states in a two-dimensional (2D) electron system.
We observe microwave induced nonlocal resistance in magnetotransport in single and bilayer electronic systems. The obtained results provide evidence for an edge state current stabilized by microwave irradiation due to nonlinear resonances. Our observation are closely related to microwave induced oscillations and zero resistance states in a two-dimensional (2D) electron system.
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Submitted 22 April, 2014;
originally announced April 2014.
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Resonant optical control of the electrically-induced spin polarization by periodic excitation
Authors:
Felix G. G. Hernandez,
Gennady M. Gusev,
Askhat K. Bakarov
Abstract:
We show that the electron spin polarization generated by an electrical current may have its direction controlled and magnitude amplified by periodic optical excitation. The electrical and optical spin control methods were combined and implemented in a two-dimensional electron gas. By Kerr rotation in an external transverse magnetic field, we demonstrate unexpected long-lived coherent spin oscillat…
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We show that the electron spin polarization generated by an electrical current may have its direction controlled and magnitude amplified by periodic optical excitation. The electrical and optical spin control methods were combined and implemented in a two-dimensional electron gas. By Kerr rotation in an external transverse magnetic field, we demonstrate unexpected long-lived coherent spin oscillations of the current-induced signal in a system with large spin-orbit interaction. Using a single linearly polarized pulse for spin manipulation and detection, we found a strong dependence on the pulse optical power and sample temperature indicating the relevance of the hole spin in the electron spin initialization. The signal was mapped in a Hall bar as function of the position relative to the injection contact. Finally, the presence of an in-plane spin polarization was directly verified by rotating the experimental geometry.
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Submitted 22 May, 2014; v1 submitted 27 March, 2014;
originally announced March 2014.
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Hysteretic phenomena in a 2DEG in quantum Hall effect regime studied in a transport experiment
Authors:
M. V. Budantsev,
D. A. Pokhabov,
A. G. Pogosov,
E. Yu. Zhdanov,
A. K. Bakarov,
A. I. Toropov
Abstract:
We investigated experimentally non-equilibrium state of a two-dimensional electron gas (2DEG) in the quantum Hall effect (QHE) regime, studying the hysteresis of magnetoresistance of a 2DEG with a constriction. The large amplitude of the hysteresis enabled us to make the consistent phenomenological description of the hysteresis. We studied the dependence on the magnetic field sweep prehistory (min…
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We investigated experimentally non-equilibrium state of a two-dimensional electron gas (2DEG) in the quantum Hall effect (QHE) regime, studying the hysteresis of magnetoresistance of a 2DEG with a constriction. The large amplitude of the hysteresis enabled us to make the consistent phenomenological description of the hysteresis. We studied the dependence on the magnetic field sweep prehistory (minor loop measurements), recovered the anhysteretic curve, and studied the time dependence of the magnetoresistance. We showed that the hysteresis of magnetoresistance of a 2DEG in the QHE regime has significant phenomenological similarities with the hysteresis of magnetization of ferromagnetic materials, showing multistability, jumps of relaxation, and having the anhysteretic curve. Nevertheless, we revealed the crucial difference, manifested itself in an unusual inverted (anti-coercive) behavior of the magnetoresistance hysteresis. The time relaxation of the hysteresis has fast and slow regimes, similar to that of non-equilibrium magnetization of a 2DEG in QHE regime pointing to their common origin. We studied the dependence of the hysteresis loop area on the lithographic width of the constriction and found the threshold value of width $\sim$1.35 $μ$m beyond which the hysteresis is not observed. This points to the edge nature of the non-equilibrium currents (NECs) and allows us to determine the width of the NECs area ($\sim$0.5 $μ$m). We suggest the qualitative picture of the observed hysteresis, based on non-equilibrium redistribution of the electrons among the Landau level states and assuming huge imbalance between the population of bulk and edge electronic states.
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Submitted 24 September, 2013;
originally announced September 2013.
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Non-linear transport phenomena in a two-subband system
Authors:
S. Wiedmann,
G. M. Gusev,
O. E. Raichev,
A. K. Bakarov,
J. C. Portal
Abstract:
We study non-linear transport phenomena in a high-mobility bilayer system with two closely spaced populated electronic subbands in a perpendicular magnetic field. For a moderate direct current excitation, we observe zero-differential-resistance states with a characteristic 1/B periodicity. We investigate, both experimentally and theoretically, the Hall field-induced resistance oscillations which m…
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We study non-linear transport phenomena in a high-mobility bilayer system with two closely spaced populated electronic subbands in a perpendicular magnetic field. For a moderate direct current excitation, we observe zero-differential-resistance states with a characteristic 1/B periodicity. We investigate, both experimentally and theoretically, the Hall field-induced resistance oscillations which modulate the high-frequency magneto-intersubband oscillations in our system if we increase the current. We also observe and describe the influence of direct current on the magnetoresistance in the presence of microwave irradiation.
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Submitted 10 October, 2011;
originally announced October 2011.
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Microwave-induced Hall resistance in bilayer electron systems
Authors:
S. Wiedmann,
G. M. Gusev,
O. E. Raichev,
S. Krämer,
A. K. Bakarov,
J. C. Portal
Abstract:
The influence of microwave irradiation on dissipative and Hall resistance in high-quality bilayer electron systems is investigated experimentally. We observe a deviation from odd symmetry under magnetic field reversal in the microwave-induced Hall resistance $ΔR_{xy}$ whereas the dissipative resistance $ΔR_{xx}$ obeys even symmetry. Studies of $ΔR_{xy}$ as a function of the microwave electric fiel…
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The influence of microwave irradiation on dissipative and Hall resistance in high-quality bilayer electron systems is investigated experimentally. We observe a deviation from odd symmetry under magnetic field reversal in the microwave-induced Hall resistance $ΔR_{xy}$ whereas the dissipative resistance $ΔR_{xx}$ obeys even symmetry. Studies of $ΔR_{xy}$ as a function of the microwave electric field and polarization exhibit a strong and non-trivial power and polarization dependence. The obtained results are discussed in connection to existing theoretical models of microwave-induced photoconductivity.
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Submitted 17 May, 2011;
originally announced May 2011.
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Interaction correction to conductivity of Al$_x$Ga$_{1-x}$As/GaAs double quantum well heterostructures near the balance
Authors:
G. M. Minkov,
A. V. Germanenko,
O. E. Rut,
A. A. Sherstobitov,
A. K. Bakarov,
D. V. Dmitriev
Abstract:
The electron-electron interaction quantum correction to the conductivity of the gated double well Al$_x$Ga$_{1-x}$As/GaAs structures is investigated experimentally. The analysis of the temperature and magnetic field dependences of the conductivity tensor allows us to obtain reliably the diffusion part of the interaction correction for the regimes when the structure is balanced and when only one qu…
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The electron-electron interaction quantum correction to the conductivity of the gated double well Al$_x$Ga$_{1-x}$As/GaAs structures is investigated experimentally. The analysis of the temperature and magnetic field dependences of the conductivity tensor allows us to obtain reliably the diffusion part of the interaction correction for the regimes when the structure is balanced and when only one quantum well is occupied. The surprising result is that the interaction correction does not reveal resonant behavior; it is practically the same for both regimes.
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Submitted 31 January, 2011;
originally announced January 2011.
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Evidence for zero-differential resistance states in electronic bilayers
Authors:
G. M. Gusev,
S. Wiedmann,
O. E. Raichev,
A. K. Bakarov,
J. C. Portal
Abstract:
We observe zero-differential resistance states at low temperatures and moderate direct currents in a bilayer electron system formed by a wide quantum well. Several regions of vanishing resistance evolve from the inverted peaks of magneto-intersubband oscillations as the current increases. The experiment, supported by a theoretical analysis, suggests that the origin of this phenomenon is based on i…
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We observe zero-differential resistance states at low temperatures and moderate direct currents in a bilayer electron system formed by a wide quantum well. Several regions of vanishing resistance evolve from the inverted peaks of magneto-intersubband oscillations as the current increases. The experiment, supported by a theoretical analysis, suggests that the origin of this phenomenon is based on instability of homogeneous current flow under conditions of negative differential resistivity which leads to formation of current domains in our sample, similar to the case of single-layer systems.
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Submitted 26 January, 2011;
originally announced January 2011.
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Thermally activated intersubband scattering and oscillating magnetoresistance in quantum wells
Authors:
S. Wiedmann,
G. M. Gusev,
O. E. Raichev,
A. K. Bakarov,
J. C. Portal
Abstract:
Experimental studies of magnetoresistance in high-mobility wide quantum wells reveal oscillations which appear with an increase in temperature to 10 K and whose period is close to that of Shubnikov-de Haas oscillations. The observed phenomenon is identified as magnetointersubband oscillations caused by the scattering of electrons between two occupied subbands and the third subband which becomes oc…
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Experimental studies of magnetoresistance in high-mobility wide quantum wells reveal oscillations which appear with an increase in temperature to 10 K and whose period is close to that of Shubnikov-de Haas oscillations. The observed phenomenon is identified as magnetointersubband oscillations caused by the scattering of electrons between two occupied subbands and the third subband which becomes occupied as a result of thermal activation. These small-period oscillations are less sensitive to thermal suppression than the largeperiod magnetointersubband oscillations caused by the scattering between the first and the second subbands. Theoretical study, based on consideration of electron scattering near the edge of the third subband, gives a reasonable explanation of our experimental findings.
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Submitted 28 October, 2010;
originally announced October 2010.
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Dephasing and interwell transitions in double quantum well heterostructures
Authors:
G. M. Minkov,
A. V. Germanenko,
O. E. Rut,
A. A. Sherstobitov,
A. K. Bakarov,
D. V. Dmitriev
Abstract:
The interference quantum correction to the conductivity in the gated double quantum well Al$_x$Ga$_{1-x}$As/GaAs/Al$_x$Ga$_{1-x}$As structures is studied experimentally. The consistent analysis of the interference induced positive magnetoconductivity allows us to find the interwell transition time $τ_{12}$ and the electron dephasing time $τ_φ$. It has been obtained that $τ_{12}^{-1}$ resonantly de…
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The interference quantum correction to the conductivity in the gated double quantum well Al$_x$Ga$_{1-x}$As/GaAs/Al$_x$Ga$_{1-x}$As structures is studied experimentally. The consistent analysis of the interference induced positive magnetoconductivity allows us to find the interwell transition time $τ_{12}$ and the electron dephasing time $τ_φ$. It has been obtained that $τ_{12}^{-1}$ resonantly depends on the difference between the electron densities in the wells as predicted theoretically. The dephasing times have been determined under the conditions when one and both quantum wells are occupied. The surprising result is that the $τ_φ$ value in the one well does not depend on the occupation of the other one.
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Submitted 20 July, 2010;
originally announced July 2010.
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Microwave zero-resistance states in a bilayer electron system
Authors:
S. Wiedmann,
G. M. Gusev,
O. E. Raichev,
A. K. Bakarov,
J. C. Portal
Abstract:
Magnetotransport measurements on a high-mobility electron bilayer system formed in a wide GaAs quantum well reveal vanishing dissipative resistance under continuous microwave irradiation. Profound zero-resistance states (ZRS) appear even in the presence of additional intersubband scattering of electrons. We study the dependence of photoresistance on frequency, microwave power. and temperature. Exp…
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Magnetotransport measurements on a high-mobility electron bilayer system formed in a wide GaAs quantum well reveal vanishing dissipative resistance under continuous microwave irradiation. Profound zero-resistance states (ZRS) appear even in the presence of additional intersubband scattering of electrons. We study the dependence of photoresistance on frequency, microwave power. and temperature. Experimental results are compared with a theory demonstrating that the conditions for absolute negative resistivity correlate with the appearance of ZRS.
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Submitted 8 July, 2010;
originally announced July 2010.
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Magnetic field induced transition in a wide parabolic well superimposed with superlattice
Authors:
G. M. Gusev,
Yu. A. Pusep,
A. K. Bakarov,
A. I. Toropov,
J. C. Portal
Abstract:
We study a $Al_{x}Ga_{x-1}As$ parabolic quantum wells (PQW) with $GaAs/Al_{x}Ga_{x-1}As$ square superlattice. The magnetotransport in PQW with intentionally disordered short-period superlattice reveals a surprising transition from electrons distribution over whole parabolic well to independent-layer states with unequal density. The transition occurs in the perpendicular magnetic field at Landau fi…
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We study a $Al_{x}Ga_{x-1}As$ parabolic quantum wells (PQW) with $GaAs/Al_{x}Ga_{x-1}As$ square superlattice. The magnetotransport in PQW with intentionally disordered short-period superlattice reveals a surprising transition from electrons distribution over whole parabolic well to independent-layer states with unequal density. The transition occurs in the perpendicular magnetic field at Landau filling factor $ν\approx3$ and is signaled by the appearance of the strong and developing fractional quantum Hall (FQH) states and by the enhanced slope of the Hall resistance. We attribute the transition to the possible electron localization in the x-y plane inside the lateral wells, and formation of the FQH states in the central well of the superlattice, driven by electron-electron interaction.
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Submitted 7 April, 2010;
originally announced April 2010.
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Crossover between distinct mechanisms of microwave photoresistance in bilayer systems
Authors:
S. Wiedmann,
G. M. Gusev,
O. E. Raichev,
A. K. Bakarov,
J. C. Portal
Abstract:
We report on temperature-dependent magnetoresistance measurements in balanced double quantum wells exposed to microwave irradiation for various frequencies. We have found that the resistance oscillations are described by the microwave-induced modification of electron distribution function limited by inelastic scattering (inelastic mechanism), up to a temperature of T*~4 K. With increasing temper…
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We report on temperature-dependent magnetoresistance measurements in balanced double quantum wells exposed to microwave irradiation for various frequencies. We have found that the resistance oscillations are described by the microwave-induced modification of electron distribution function limited by inelastic scattering (inelastic mechanism), up to a temperature of T*~4 K. With increasing temperature, a strong deviation of the oscillation amplitudes from the behavior predicted by this mechanism is observed, presumably indicating a crossover to another mechanism of microwave photoresistance, with similar frequency dependence. Our analysis shows that this deviation cannot be fully understood in terms of contribution from the mechanisms discussed in theory.
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Submitted 11 February, 2010;
originally announced February 2010.
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Magnetoresistance oscillations in multilayer systems - triple quantum wells
Authors:
S. Wiedmann,
N. C. Mamani,
G. M. Gusev,
O. E. Raichev,
A. K. Bakarov,
J. C. Portal
Abstract:
Magnetoresistance of two-dimensional electron systems with several occupied subbands oscillates owing to periodic modulation of the probability of intersubband transitions by the quantizing magnetic field. In addition to previous investigations of these magneto-intersubband (MIS) oscillations in two-subband systems, we report on both experimental and theoretical studies of such a phenomenon in t…
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Magnetoresistance of two-dimensional electron systems with several occupied subbands oscillates owing to periodic modulation of the probability of intersubband transitions by the quantizing magnetic field. In addition to previous investigations of these magneto-intersubband (MIS) oscillations in two-subband systems, we report on both experimental and theoretical studies of such a phenomenon in three-subband systems realized in triple quantum wells. We show that the presence of more than two subbands leads to a qualitatively different MIS oscillation picture, described as a superposition of several oscillating contributions. Under a continuous microwave irradiation, the magnetoresistance of triple-well systems exhibits an interference of MIS oscillations and microwaveinduced resistance oscillations. The theory explaining these phenomena is presented in the general form, valid for an arbitrary number of subbands. A comparison of theory and experiment allows us to extract temperature dependence of quantum lifetime of electrons and to confirm the applicability of the inelastic mechanism of microwave photoresistance for the description of magnetotransport in multilayer systems.
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Submitted 7 December, 2009;
originally announced December 2009.
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The Coulomb Blockade Resonant Breakdown Caused By The Quantum Dot Mechanical Oscillations
Authors:
A. G. Pogosov,
M. V. Budantsev,
A. A. Shevyrin,
A. E. Plotnikov,
A. K. Bakarov,
A. I. Toropov
Abstract:
Influence of forced mechanical vibrations of a suspended single-electron transistor on electron tunneling through the quantum dot limited by the Coulomb blockade is investigated. It is shown that mechanical oscillations of the quantum dot lead to the Coulomb blockade breakdown, shown in sharp resonant peaks in the transistor conductance dependence on the excitation frequency at values correspond…
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Influence of forced mechanical vibrations of a suspended single-electron transistor on electron tunneling through the quantum dot limited by the Coulomb blockade is investigated. It is shown that mechanical oscillations of the quantum dot lead to the Coulomb blockade breakdown, shown in sharp resonant peaks in the transistor conductance dependence on the excitation frequency at values corresponding to the mechanical oscillations eigen modes. Physical mechanism of the observed effect is considered. It is presumably connected with oscillations of the mutual electrical capacitances between the quantum dot and surrounding electrodes.
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Submitted 2 November, 2009;
originally announced November 2009.
