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Surface Plasmon Assisted Control of Hot-Electron Relaxation Time
Authors:
Sarvenaz Memarzadeh,
Jongbum Kim,
Yigit Aytac,
Thomas E. Murphy,
Jeremy N. Munday
Abstract:
Surface plasmon mediated hot carrier generation is widely utilized for the manipulation of the electron-photon interactions in many types of optoelectronic devices including solar cells, photodiodes, and optical modulators. A diversity of plasmonic systems such as nanoparticles, resonators, and waveguides have been introduced to enhance hot carrier generation; however, the impact of the propagatin…
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Surface plasmon mediated hot carrier generation is widely utilized for the manipulation of the electron-photon interactions in many types of optoelectronic devices including solar cells, photodiodes, and optical modulators. A diversity of plasmonic systems such as nanoparticles, resonators, and waveguides have been introduced to enhance hot carrier generation; however, the impact of the propagating surface plasmons on hot carrier lifetime has not been clearly demonstrated. Here, we systematically study the hot carrier relaxation in thin film gold (Au) samples under surface plasmon coupling with the Kretschmann configuration. We observe that the locally confined electric field at the surface of the metal significantly affects the hot carrier distribution and electron temperature, which results in a slowing of the hot electrons relaxation time, regardless of the average value of the absorbed power in the Au thin film. This result could be extended to other plasmonic nanostructures, enabling the control of hot carrier lifetimes throughout the optical frequency range.
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Submitted 20 November, 2019;
originally announced November 2019.
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Effect of defect-induced cooling on graphene hot-electron bolometers
Authors:
Abdel El Fatimy,
Peize Han,
Nicholas Quirk,
Luke St. Marie,
Matthew T. Dejarld,
Rachael L. Myers-Ward,
Kevin Daniels,
Shojan Pavunny,
D. Kurt Gaskill,
Yigit Aytac,
Thomas E. Murphy,
Paola Barbara
Abstract:
At high phonon temperature, defect-mediated electron-phonon collisions (supercollisions) in graphene allow for larger energy transfer and faster cooling of hot electrons than the normal, momentum-conserving electron-phonon collisions. Disorder also affects the heat flow between electrons and phonons at very low phonon temperature, where the phonon wavelength exceeds the mean free path. In both cas…
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At high phonon temperature, defect-mediated electron-phonon collisions (supercollisions) in graphene allow for larger energy transfer and faster cooling of hot electrons than the normal, momentum-conserving electron-phonon collisions. Disorder also affects the heat flow between electrons and phonons at very low phonon temperature, where the phonon wavelength exceeds the mean free path. In both cases, the cooling rate is predicted to exhibit a characteristic cubic power law dependence on the electron temperature, markedly different from the T^4 dependence predicted for pristine graphene. The impact of defect-induced cooling on the performance of optoelectronic devices is still largely unexplored. Here we study the cooling mechanism of hot-electron bolometers based on epitaxial graphene quantum dots where the defect density can be controlled with the fabrication process. The devices with high defect density exhibit the cubic power law. Defect-induced cooling yields a slower increase of the thermal conductance with increasing temperature, thereby greatly enhancing the device responsivity compared to devices with lower defect density and operating with normal-collision cooling.
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Submitted 8 May, 2019;
originally announced May 2019.
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Optical Control of Chiral Charge Pumping in a Topological Weyl Semimetal
Authors:
M. Mehdi Jadidi,
Mehdi Kargarian,
Martin Mittendorff,
Yigit Aytac,
Bing Shen,
Jacob C. König-Otto,
Stephan Winnerl,
Ni Ni,
Alexander L. Gaeta,
Thomas E. Murphy,
H. Dennis Drew
Abstract:
Solids with topologically robust electronic states exhibit unusual electronic and optical transport properties that do not exist in other materials. A particularly interesting example is chiral charge pumping, the so-called chiral anomaly, in recently discovered topological Weyl semimetals, where simultaneous application of parallel DC electric and magnetic fields creates an imbalance in the numbe…
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Solids with topologically robust electronic states exhibit unusual electronic and optical transport properties that do not exist in other materials. A particularly interesting example is chiral charge pumping, the so-called chiral anomaly, in recently discovered topological Weyl semimetals, where simultaneous application of parallel DC electric and magnetic fields creates an imbalance in the number of carriers of opposite topological charge (chirality). Here, using time-resolved terahertz measurements on the Weyl semimetal TaAs in a magnetic field, we optically interrogate the chiral anomaly by dynamically pumping the chiral charges and monitoring their subsequent relaxation. Theory based on Boltzmann transport shows that the observed effects originate from an optical nonlinearity in the chiral charge pumping process. Our measurements reveal that the chiral population relaxation time is much greater than 1 ns. The observation of terahertz-controlled chiral carriers with long coherence times and topological protection suggests the application of Weyl semimetals for quantum optoelectronic technology.
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Submitted 6 May, 2019;
originally announced May 2019.
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Probing the Free-carrier Absorption in Multi-Layer Black Phosphorus
Authors:
Y. Aytac,
M. Mittendoff,
T. E. Murphy
Abstract:
We study the carrier relaxation dynamics in thin black phosphorus (bP) using time-resolved differential transmission measurements. The inter-band and intra-band transitions, relaxation, and carrier recombination lifetimes are revealed by tuning the mid-infrared probe wavelength above and below the bandgap of black phosphorus. When the probe energy exceeds the bandgap, Pauli blocked inter-band tran…
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We study the carrier relaxation dynamics in thin black phosphorus (bP) using time-resolved differential transmission measurements. The inter-band and intra-band transitions, relaxation, and carrier recombination lifetimes are revealed by tuning the mid-infrared probe wavelength above and below the bandgap of black phosphorus. When the probe energy exceeds the bandgap, Pauli blocked inter-band transitions are observed. The differential transmission signal changes sign from positive to negative when the probe energy is below the bandgap, due to the absence of inter-band transitions and enhancement in the free-carrier absorption (FCA). The minority carrier lifetime and radiative recombination coefficient are estimated 1.3 ns, and 5.9$\rm \times 10^{-10}$ $\rm cm^{3}/s$, respectively. The overall recombination lifetime of bP is limited by radiative recombination for excess carrier densities larger than 5$\rm \times 10^{19}$ $\rm cm^{-3}$.
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Submitted 15 May, 2018;
originally announced May 2018.
