Limitation of simple np-n tunnel junction based LEDs grown by MOVPE
Authors:
Yoann Robin,
Quentin Bournet,
Geoffrey Avit,
Markus Pristovsek,
Yamina André,
Agnès Trassoudaine,
Hiroshi Amano
Abstract:
We show evidence that tunnel junctions (TJs) in GaN grown by metal-organic vapor phase epitaxy are dominated by trap-assisted (Poole-Frenkel) tunneling. This stems from observations of the careful optimized doping for the TJs. Especially the p$^{++}$ and the n$^{++}$ layers are far from ideal. The n$^{++}$ layer induces 3D growth, which can be seen by a rising oxygen signal in Secondary Ions Mass…
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We show evidence that tunnel junctions (TJs) in GaN grown by metal-organic vapor phase epitaxy are dominated by trap-assisted (Poole-Frenkel) tunneling. This stems from observations of the careful optimized doping for the TJs. Especially the p$^{++}$ and the n$^{++}$ layers are far from ideal. The n$^{++}$ layer induces 3D growth, which can be seen by a rising oxygen signal in Secondary Ions Mass Spectroscopy (SIMS). Furthermore, Mg segregation observed by SIMS indicates a depletion region of more than 10 nm. Still, we could realize TJ based LEDs with a low penalty voltage of 1.1 V and a specific differential resistance of about 10$^{-2}$ $Ω$.cm$^2$ at 20 mA without using an InGaN interlayer.
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Submitted 10 January, 2020;
originally announced January 2020.
VLS-HVPE growth of ultra-long and defect-free GaAs nanowires investigated by ab initio simulation coupled to near-field microscopy
Authors:
Yamina Andre,
Kaddour Lekhal,
Philip Hoggan,
Geoffrey Avit,
Fabian Cadiz,
Alistair Rowe,
Daniel Paget,
Elodie Petit,
Christine Leroux,
Agnes Trassoudaine,
Reda Ramdani,
Guillaume Monier,
David Colas,
Rabih Ajib,
Dominique Castelluci,
Evelyne Gil
Abstract:
High aspect ratio, rod-like and single crystal phase GaAs nanowires (NWs) were grown by gold catalyst-assisted hydride vapor phase epitaxy (HVPE). High resolution transmission electron microscopy (HRTEM) and micro-Raman spectroscopy revealed polytypism-free zinc blende NWs over lengths of several tens of micrometers for diameters ranging between 50 and 150 nm. Micro-photoluminescence studies of in…
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High aspect ratio, rod-like and single crystal phase GaAs nanowires (NWs) were grown by gold catalyst-assisted hydride vapor phase epitaxy (HVPE). High resolution transmission electron microscopy (HRTEM) and micro-Raman spectroscopy revealed polytypism-free zinc blende NWs over lengths of several tens of micrometers for diameters ranging between 50 and 150 nm. Micro-photoluminescence studies of individual NWs showed linewidths smaller than those reported elsewhere which is consistent with the crystalline quality of the NWs. HVPE makes use of chloride growth precursors of which high decomposition frequency, after adsorption onto the catalyst particle, favors a direct and rapid introduction of the Ga atoms from the vapor phase into the catalyst liquid droplet. This yields high axial growth rate (more than 100 micron/h) of NWs. The fast diffusion of the Ga atoms in the droplet towards the interface between the liquid and the solid nanowire was investigated by using density functional theory calculations. The diffusion coefficient of Ga atoms was estimated to be 3x10-9 m2/s, which matches the experimental observations.
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Submitted 30 January, 2014; v1 submitted 17 October, 2013;
originally announced October 2013.
