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Magnetoresistance in Co-hBN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin hBN barriers
Authors:
Pablo U. Asshoff,
Jose L. Sambricio,
Sergey Slizovskiy,
Aidan P. Rooney,
Takashi Taniguchi,
Kenji Watanabe,
Sarah J. Haigh,
Vladimir Fal'ko,
Irina V. Grigorieva,
Ivan J. Vera-Marun
Abstract:
Hexagonal boron nitride (hBN) is a prototypical high-quality two-dimensional insulator and an ideal material to study tunneling phenomena, as it can be easily integrated in vertical van der Waals devices. For spintronic devices, its potential has been demonstrated both for efficient spin injection in lateral spin valves and as a barrier in magnetic tunnel junctions (MTJs). Here we reveal the effec…
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Hexagonal boron nitride (hBN) is a prototypical high-quality two-dimensional insulator and an ideal material to study tunneling phenomena, as it can be easily integrated in vertical van der Waals devices. For spintronic devices, its potential has been demonstrated both for efficient spin injection in lateral spin valves and as a barrier in magnetic tunnel junctions (MTJs). Here we reveal the effect of point defects inevitably present in mechanically exfoliated hBN on the tunnel magnetoresistance of Co-hBN-NiFe MTJs. We observe a clear enhancement of both the conductance and magnetoresistance of the junction at well-defined bias voltages, indicating resonant tunneling through magnetic (spin-polarized) defect states. The spin polarization of the defect states is attributed to exchange coupling of a paramagnetic impurity in the few-atomic-layer thick hBN to the ferromagnetic electrodes. This is confirmed by excellent agreement with theoretical modelling. Our findings should be taken into account in analyzing tunneling processes in hBN-based magnetic devices. More generally, our study shows the potential of using atomically thin hBN barriers with defects to engineer the magnetoresistance of MTJs and to achieve spin filtering, opening the door towards exploiting the spin degree of freedom in current studies of point defects as quantum emitters.
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Submitted 3 October, 2018;
originally announced October 2018.
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Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphene
Authors:
P. U. Asshoff,
J. L. Sambricio,
A. P. Rooney,
S. Slizovskiy,
A. Mishchenko,
A. M. Rakowski,
E. W. Hill,
A. K. Geim,
S. J. Haigh,
V. I. Fal'ko,
I. J. Vera-Marun,
I. V. Grigorieva
Abstract:
Graphene is hailed as an ideal material for spintronics due to weak intrinsic spin-orbit interaction that facilitates lateral spin transport and tunability of its electronic properties, including a possibility to induce magnetism in graphene. Another promising application of graphene is related to its use as a spacer separating ferromagnetic metals (FMs) in vertical magnetoresistive devices, the m…
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Graphene is hailed as an ideal material for spintronics due to weak intrinsic spin-orbit interaction that facilitates lateral spin transport and tunability of its electronic properties, including a possibility to induce magnetism in graphene. Another promising application of graphene is related to its use as a spacer separating ferromagnetic metals (FMs) in vertical magnetoresistive devices, the most prominent class of spintronic devices widely used as magnetic sensors. In particular, few-layer graphene was predicted to act as a perfect spin filter. Here we show that the role of graphene in such devices (at least in the absence of epitaxial alignment between graphene and the FMs) is different and determined by proximity-induced spin splitting and charge transfer with adjacent ferromagnetic metals, making graphene a weak FM electrode rather than a spin filter. To this end, we report observations of magnetoresistance (MR) in vertical Co-graphene-NiFe junctions with 1 to 4 graphene layers separating the ferromagnets, and demonstrate that the dependence of the MR sign on the number of layers and its inversion at relatively small bias voltages is consistent with spin transport between weakly doped and differently spin-polarized layers of graphene. The proposed interpretation is supported by the observation of an MR sign reversal in biased Co-graphene-hBN-NiFe devices and by comprehensive structural characterization. Our results suggest a new architecture for vertical devices with electrically controlled MR.
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Submitted 16 June, 2017; v1 submitted 4 July, 2016;
originally announced July 2016.
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Resonant tunneling spectroscopy of valley eigenstates on a hybrid double quantum dot
Authors:
T. Kobayashi,
J. van der Heijden,
M. G. House,
S. J. Hile,
Pablo Asshoff,
M. F. Gonzalez-Zalba,
M. Vinet,
M. Y. Simmons,
S. Rogge
Abstract:
We report electronic transport measurements through a silicon hybrid double quantum dot consisting of a donor and a quantum dot. Transport spectra show resonant tunneling peaks involving different valley states, which illustrate the valley splitting in a quantum dot on a Si/SiO2 interface. The detailed gate bias dependence of double dot transport allows a first direct observation of the valley spl…
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We report electronic transport measurements through a silicon hybrid double quantum dot consisting of a donor and a quantum dot. Transport spectra show resonant tunneling peaks involving different valley states, which illustrate the valley splitting in a quantum dot on a Si/SiO2 interface. The detailed gate bias dependence of double dot transport allows a first direct observation of the valley splitting in the quantum dot, which is controllable between 160-240 ueV with an electric field dependence 1.2 +- 0.2 meV/(MV/m). A large valley splitting is an essential requirement to implement a physical electron spin qubit in a silicon quantum dot.
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Submitted 13 April, 2016;
originally announced April 2016.
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A spintronic source of circularly polarized single photons
Authors:
Pablo Asshoff,
Andreas Merz,
Heinz Kalt,
Michael Hetterich
Abstract:
We present a spintronic single photon source which emits circularly polarized light, where the helicity is determined by an applied magnetic field. Photons are emitted from an InGaAs quantum dot inside an electrically operated spin light-emitting diode, which comprises the diluted magnetic semiconductor ZnMnSe. The circular polarization degree of the emitted light is high, reaching 83% at an appli…
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We present a spintronic single photon source which emits circularly polarized light, where the helicity is determined by an applied magnetic field. Photons are emitted from an InGaAs quantum dot inside an electrically operated spin light-emitting diode, which comprises the diluted magnetic semiconductor ZnMnSe. The circular polarization degree of the emitted light is high, reaching 83% at an applied magnetic field of 2T and 96% at 6 T. Autocorrelation traces recorded in pulsed operation mode prove the emitted light to be antibunched. The two circular polarization states could be used for representing quantum states |0> and |1> in quantum cryptography implementations.
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Submitted 6 March, 2011;
originally announced March 2011.
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Vortex states in patterned exchange biased NiO/Ni samples
Authors:
Pablo Asshoff,
Katharina Theis-Bröhl,
Oleg Petracic,
Hartmut Zabel
Abstract:
We investigated the magnetization reversal of arrays of exchange biased NiO/Ni squares with superconducting quantum interference device magnetometry and micromagnetic simulations. The edges of the squares were 0.5, 1.5, and 3.0 $μ$m long. The NiO/Ni structures exhibit vortexlike hysteresis loops and micromagnetic calculations show that this feature is due to several vortices nucleating in the is…
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We investigated the magnetization reversal of arrays of exchange biased NiO/Ni squares with superconducting quantum interference device magnetometry and micromagnetic simulations. The edges of the squares were 0.5, 1.5, and 3.0 $μ$m long. The NiO/Ni structures exhibit vortexlike hysteresis loops and micromagnetic calculations show that this feature is due to several vortices nucleating in the islands. Furthermore, for the arrays with squares of 1.5 $μ$m edge length, the sign of the exchange bias field changes, as compared to the same continuous NiO/Ni layer. We attribute the vortex nucleation and the change of the exchange bias field to the interplay between shape and unidirectional anisotropy.
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Submitted 21 August, 2009; v1 submitted 28 June, 2008;
originally announced June 2008.
