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Deterministic coupling of site-controlled quantum emitters in monolayer semiconductors to plasmonic nanocavities
Authors:
Yue Luo,
Gabriella D. Shepard,
Jenny V. Ardelean,
James C. Hone,
Stefan Strauf
Abstract:
Solid-state single-quantum emitters are a crucial resource for on-chip photonic quantum technologies and require efficient cavity-emitter coupling to realize quantum networks beyond the single-node level. Previous approaches to enhance light-matter interactions rely on forming nanocavities around randomly located quantum dots or color centers but lack spatial control of the quantum emitter itself…
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Solid-state single-quantum emitters are a crucial resource for on-chip photonic quantum technologies and require efficient cavity-emitter coupling to realize quantum networks beyond the single-node level. Previous approaches to enhance light-matter interactions rely on forming nanocavities around randomly located quantum dots or color centers but lack spatial control of the quantum emitter itself that is required for scaling. Here we demonstrate a deterministic approach to achieve Purcell-enhancement at lithographically defined locations using the sharp corner of a metal nanocube for both electric field enhancement and to deform a two-dimensional material. For a 3 by 4 array of strain-induced exciton quantum emitters formed into monolayer WSe2 we show spontaneous emission rate enhancement with Purcell-factors (FP) up to FP=1050 (average FP=272), single-photon purification, and cavity-enhanced quantum yields increasing from initially 1 % to 15 %. The utility of our nanoplasmonic platform is applicable to other 2D material, including boron nitride, opening new inroads in quantum photonics.
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Submitted 17 April, 2018;
originally announced April 2018.
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Trion Species-Resolved Quantum Beats in MoSe2
Authors:
Gabriella D. Shepard,
Jenny V. Ardelean,
Daniel A. Rhodes,
X. -Y. Zhu,
James C. Hone,
Stefan Strauf
Abstract:
Monolayer photonic materials offer a tremendous potential for on-chip optoelectronic devices. Their realization requires knowledge of optical coherence properties of excitons and trions that have so far been limited to nonlinear optical experiments carried out with strongly inhomogenously broadened material. Here we employ h-BN encapsulated and electrically gated MoSe2 to reveal coherence properti…
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Monolayer photonic materials offer a tremendous potential for on-chip optoelectronic devices. Their realization requires knowledge of optical coherence properties of excitons and trions that have so far been limited to nonlinear optical experiments carried out with strongly inhomogenously broadened material. Here we employ h-BN encapsulated and electrically gated MoSe2 to reveal coherence properties of trion-species directly in the linear optical response. Autocorrelation measurements reveal long dephasing times up to T2=1.16+-0.05 ps for positively charged excitons. Gate dependent measurements provide evidence that the positively-charged trion forms via spatially localized hole states making this trion less prone to dephasing in the presence of elevated hole carrier concentrations. Quantum beat signatures demonstrate coherent coupling between excitons and trions that have a dephasing time up to 0.6 ps, a two-fold increase over those in previous reports. A key merit of the prolonged exciton/trion coherences is that they were achieved in a linear optical experiment, and thus are directly relevant to applications in nanolasers, coherent control, and on-chip quantum information processing requiring long photon coherence.
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Submitted 11 September, 2017;
originally announced September 2017.
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Approaching the Intrinsic Photoluminescence Linewidth in Transition Metal Dichalcogenide Monolayers
Authors:
Obafunso A. Ajayi,
Jenny V. Ardelean,
Gabriella D. Shepard,
Jue Wang,
Abhinandan Antony,
Takeshi Taniguchi,
Kenji Watanabe,
Tony F. Heinz,
Stefan Strauf,
X. -Y. Zhu,
James C. Hone
Abstract:
Excitonic states in monolayer transition metal dichalcogenides (TMDCs) have been the subject of extensive recent interest. Their intrinsic properties can, however, be obscured due to the influence of inhomogeneity in the external environment. Here we report methods for fabricating high quality TMDC monolayers with narrow photoluminescence (PL) linewidth approaching the intrinsic limit. We find tha…
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Excitonic states in monolayer transition metal dichalcogenides (TMDCs) have been the subject of extensive recent interest. Their intrinsic properties can, however, be obscured due to the influence of inhomogeneity in the external environment. Here we report methods for fabricating high quality TMDC monolayers with narrow photoluminescence (PL) linewidth approaching the intrinsic limit. We find that encapsulation in hexagonal boron nitride (h-BN) sharply reduces the PL linewidth, and that passivation of the oxide substrate by an alkyl monolayer further decreases the linewidth and also minimizes the charged exciton (trion) peak. The combination of these sample preparation methods results in much reduced spatial variation in the PL emission, with a full-width-at-half-maximum as low as 1.7 meV. Analysis of the PL line shape yields a homogeneous width of 1.43$\pm$0.08 meV and inhomogeneous broadening of 1.1$\pm$0.3 meV.
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Submitted 20 February, 2017;
originally announced February 2017.