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Nuclear spin polarization in silicon carbide at room temperature in the Earth's magnetic field
Authors:
A. N. Anisimov,
A. V. Poshakinskiy,
G. V. Astakhov
Abstract:
Coupled electron-nuclear spins represent a promising quantum system, where the optically induced electron spin polarization can be dynamically transferred to nuclear spins via the hyperfine interaction. Most experiments on dynamic nuclear polarization (DNP) are performed at cryogenic temperatures and/or in moderate external magnetic fields, the latter approach being very sensitive to the magnetic…
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Coupled electron-nuclear spins represent a promising quantum system, where the optically induced electron spin polarization can be dynamically transferred to nuclear spins via the hyperfine interaction. Most experiments on dynamic nuclear polarization (DNP) are performed at cryogenic temperatures and/or in moderate external magnetic fields, the latter approach being very sensitive to the magnetic field orientation. Here, we demonstrate that the $^{29}$Si nuclear spins in SiC can be efficiently polarized at room temperature even in the Earth's magnetic field. We exploit the asymmetric splitting of the optically detected magnetic resonance (ODMR) lines inherent to half-integer $S = 3/2$ electron spins, such that the certain transitions involving $^{29}$Si nuclei can be clearly separated and selectively addressed using radiofrequency (RF) fields. As a model system, we use the V3 silicon vacancy in 6H-SiC, which has the zero-filed splitting parameter comparable with the hyperfine interaction constant. Our theoretical model considers DNP under optical excitation in combination with RF driving and agrees very well with the experimental data. In the case of high-fidelity electron spin polarization, the proposed DNP protocol leads to ultra-deep optical cooling of nuclear spins with an effective temperature of about 50 nK. These results provide a straightforward approach for controlling the nuclear spin under ambient conditions, representing an important step toward realizing nuclear hyperpolarization for magnetic resonance imaging and long nuclear spin memory for quantum logic gates.
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Submitted 18 August, 2024;
originally announced August 2024.
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Identification of different silicon vacancy centers in 6H-SiC
Authors:
Harpreet Singh,
Andrei N. Anisimov,
Pavel G. Baranov,
Dieter Suter
Abstract:
Silicon vacancies in silicon carbide (SiC) have been proposed as interesting candidates for quantum technology applications such as quantum sensing and quantum repeaters. SiC exists in many polytypes with different plane stacking sequences, and in each polytype, the vacancies can occupy a variety of different lattice sites. In this work, we characterize and identify the three most important charge…
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Silicon vacancies in silicon carbide (SiC) have been proposed as interesting candidates for quantum technology applications such as quantum sensing and quantum repeaters. SiC exists in many polytypes with different plane stacking sequences, and in each polytype, the vacancies can occupy a variety of different lattice sites. In this work, we characterize and identify the three most important charged silicon vacancies in the 6H-SiC polytype. We record the photoluminescence and continuous-wave optically detected magnetic resonance spectra at different radio-frequency power levels and different temperatures. We individually select the zero-phonon lines of the different silicon vacancies at low temperatures and record the corresponding optically detected magnetic resonance (ODMR) spectra. ODMR allows us to correlate optical and magnetic resonance spectra and thereby resolve a controversy from earlier work.
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Submitted 20 December, 2022;
originally announced December 2022.
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Multi-photon multi-quantum transitions in the spin-3/2 silicon-vacancy centers of SiC
Authors:
Harpreet Singh,
Mario Alex Hollberg,
Andrei N. Anisimov,
Pavel G. Baranov,
Dieter Suter
Abstract:
Silicon vacancy centers in silicon carbide are promising candidates for storing and manipulating quantum information. Implementation of fast quantum gates is an essential requirement for quantum information processing. In a low magnetic field, the resonance frequencies of silicon vacancy spins are in the range of a few MHz, the same order of magnitude as the Rabi frequencies of typical control fie…
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Silicon vacancy centers in silicon carbide are promising candidates for storing and manipulating quantum information. Implementation of fast quantum gates is an essential requirement for quantum information processing. In a low magnetic field, the resonance frequencies of silicon vacancy spins are in the range of a few MHz, the same order of magnitude as the Rabi frequencies of typical control fields. As a consequence, the rotating wave approximation becomes invalid and nonlinear processes like the absorption and emission of multiple photons become relevant. This work focuses on multi-photon transitions of negatively charged silicon vacancies driven by a strong RF field. We present continuous-wave optically detected magnetic resonance (ODMR) spectra measured at different RF powers to identify the 1-, 2-, and 3-RF photon transitions of different types of the silicon vacancy in the 6$H$-SIC polytype. Time-resolved experiments of Rabi oscillations and free induction decays of these multiple RF photon transitions were observed for the first time. Apart from zero-field data, we also present spectra in magnetic fields with different strength and orientation with respect to the system's symmetry axis.
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Submitted 19 December, 2021;
originally announced December 2021.
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Inverted fine structure of a 6H-SiC qubit enabling robust spin-photon interface
Authors:
I. D. Breev,
Z. Shang,
A. V. Poshakinskiy,
H. Singh,
Y. Berencén,
M. Hollenbach,
S. S. Nagalyuk,
E. N. Mokhov,
R. A. Babunts,
P. G. Baranov,
D. Suter,
S. A. Tarasenko,
G. V. Astakhov,
A. N. Anisimov
Abstract:
Optically controllable solid-state spin qubits are one of the basic building blocks for applied quantum technology. Efficient extraction of emitted photons and a robust spin-photon interface are crucial for the realization of quantum sensing protocols and essential for the implementation of quantum repeaters. Though silicon carbide (SiC) is a very promising material platform hosting highly-coheren…
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Optically controllable solid-state spin qubits are one of the basic building blocks for applied quantum technology. Efficient extraction of emitted photons and a robust spin-photon interface are crucial for the realization of quantum sensing protocols and essential for the implementation of quantum repeaters. Though silicon carbide (SiC) is a very promising material platform hosting highly-coherent silicon vacancy spin qubits, a drawback for their practical application is the unfavorable ordering of the electronic levels in the optically excited state. Here, we demonstrate that due to polytypism of SiC, a particular type of silicon vacancy qubits in 6H-SiC possesses an unusual inverted fine structure. This results in the directional emission of light along the hexagonal crystallographic axis, making photon extraction more efficient and integration into photonic structures technologically straightforward. From the angular polarization dependencies of the emission, we reconstruct the spatial symmetry and determine the optical selection rules depending on the local deformation and spin-orbit interaction, enabling direct implementation of robust spin-photon entanglement schemes. Furthermore, the inverted fine structure leads to unexpected behavior of the spin readout contrast. It vanishes and recovers with lattice cooling due to two competing optical spin pumping mechanisms. Our experimental and theoretical approaches provide a deep insight into the optical and spin properties of atomic-scale qubits in SiC required for quantum communication and distributed quantum information processing.
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Submitted 14 July, 2021;
originally announced July 2021.
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Stress-controlled zero-field spin splitting in silicon carbide
Authors:
I. D. Breev,
A. V. Poshakinskiy,
V. V. Yakovleva,
S. S. Nagalyuk,
E. N. Mokhov,
R. Hübner,
G. V. Astakhov,
P. G. Baranov,
A. N. Anisimov
Abstract:
We report the influence of static mechanical deformation on the zero-field splitting of silicon vacancies in silicon carbide at room temperature. We use AlN/6H-SiC heterostructures deformed by growth conditions and monitor the stress distribution as a function of distance from the heterointerface with spatially-resolved confocal Raman spectroscopy. The zero-field splitting of the V1/V3 and V2 cent…
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We report the influence of static mechanical deformation on the zero-field splitting of silicon vacancies in silicon carbide at room temperature. We use AlN/6H-SiC heterostructures deformed by growth conditions and monitor the stress distribution as a function of distance from the heterointerface with spatially-resolved confocal Raman spectroscopy. The zero-field splitting of the V1/V3 and V2 centers in 6H-SiC, measured by optically-detected magnetic resonance, reveal significant changes at the heterointerface compared to the bulk value. This approach allows unambiguous determination of the spin-deformation interaction constant, which turns out to be $0.75 \, \mathrm{GHz}$ for the V1/V3 centers and $0.5 \, \mathrm{GHz}$ for the V2 centers. Provided piezoelectricity of AlN, our results offer a strategy to realize the on-demand fine tuning of spin transition energies in SiC by deformation.
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Submitted 8 December, 2020;
originally announced December 2020.
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Stress distribution at the AlN/SiC heterointerface probed by Raman spectroscopy
Authors:
I. D. Breev,
K. V. Likhachev,
V. V. Yakovleva,
R. Hübner,
G. V. Astakhov,
P. G. Baranov,
E. N. Mokhov,
A. N. Anisimov
Abstract:
We grow AlN/4H-SiC and AlN/6H-SiC heterostructures by physical vapor deposition and characterize the heterointerface with nanoscale resolution. Furthermore, we investigate the spatial stress and strain distribution in these heterostructures using confocal Raman spectroscopy. We measure the spectral shifts of various vibrational Raman modes across the heterointerface and along the entire depth of t…
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We grow AlN/4H-SiC and AlN/6H-SiC heterostructures by physical vapor deposition and characterize the heterointerface with nanoscale resolution. Furthermore, we investigate the spatial stress and strain distribution in these heterostructures using confocal Raman spectroscopy. We measure the spectral shifts of various vibrational Raman modes across the heterointerface and along the entire depth of the 4H- and 6H-SiC layers. Using the earlier experimental prediction for the phonon-deformation potential constants, we determine the stress tensor components in SiC as a function of the distance from the AlN/SiC heterointerface. In spite that the lattice parameter of SiC is smaller than that of AlN, the SiC layers are compressively strained at the heterointerface. This counterintuitive behavior is explained by different coefficients of thermal expansion of SiC and AlN when the heterostructures are cooled from growth to room temperature. The compressive stress values are maximum at the heterointerface, approaching one GPa, and relaxes to the equilibrium value on the scale of several tens of microns from the heterointerface.
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Submitted 27 November, 2020;
originally announced November 2020.
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Optical spin initialization of spin-3/2 silicon vacancy centers in 6H-SiC at room temperature
Authors:
Harpreet Singh,
Andrei N. Anisimov,
I. D. Breev,
Pavel G. Baranov,
Dieter Suter
Abstract:
Silicon vacancies in silicon carbide have been proposed as an alternative to nitrogen vacancy centers in diamonds for spintronics and quantum technologies. An important precondition for these applications is the initialization of the qubits into a specific quantum state. In this work, we study the optical alignment of the spin 3/2 negatively charged silicon vacancy in 6H-SiC. Using a time-resolved…
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Silicon vacancies in silicon carbide have been proposed as an alternative to nitrogen vacancy centers in diamonds for spintronics and quantum technologies. An important precondition for these applications is the initialization of the qubits into a specific quantum state. In this work, we study the optical alignment of the spin 3/2 negatively charged silicon vacancy in 6H-SiC. Using a time-resolved optically detected magnetic resonance technique, we coherently control the silicon vacancy spin ensemble and measure Rabi frequencies and spin-lattice relaxation time of all three transitions. Then to study the optical initialization process of the silicon vacancy spin ensemble, the vacancy spin ensemble is prepared in different ground states and optically excited. We describe a simple rate equation model that can explain the observed behaviour and determine the relevant rate constants.
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Submitted 9 March, 2021; v1 submitted 14 July, 2020;
originally announced July 2020.
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Electron nuclear interactions and electronic structure of spin 3/2 color centers in silicon carbide: A high-field pulse EPR and ENDOR study
Authors:
V. A. Soltamov,
B. V. Yavkin,
A. N. Anisimov,
I. D. Breev,
A. P. Bundakova,
S. B. Orlinskii,
P. G. Baranov
Abstract:
High-frequency pulse electron paramagnetic resonance (EPR) and electron nuclear double resonance (ENDOR) were used to clarify the electronic structure of the color centers with an optically induced high-temperature spin-3/2 alignment in hexagonal 4H-, 6H- and rhombic 15R- silicon carbide (SiC) polytypes. The identification is based on resolved ligand hyperfine interactions with carbon and silicon…
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High-frequency pulse electron paramagnetic resonance (EPR) and electron nuclear double resonance (ENDOR) were used to clarify the electronic structure of the color centers with an optically induced high-temperature spin-3/2 alignment in hexagonal 4H-, 6H- and rhombic 15R- silicon carbide (SiC) polytypes. The identification is based on resolved ligand hyperfine interactions with carbon and silicon nearest, next nearest and the more distant neighbors and on the determination of the spin state. The ground state and the excited state were demonstrated to have spin S = 3/2. The microscopic model suggested from the EPR and ENDOR results is as follows: a paramagnetic negatively charged silicon vacancy that is noncovalently bonded to a non-paramagnetic neutral carbon vacancy, located on the adjacent site along the SiC symmetry c-axis.
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Submitted 15 July, 2020; v1 submitted 14 July, 2020;
originally announced July 2020.
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Experimental characterization of spin-3/2 silicon vacancy centers in 6H-SiC
Authors:
Harpreet Singh,
Andrei N. Anisimov,
Sergei S. Nagalyuk,
Eugenii N. Mokhov,
Pavel G. Baranov,
Dieter Suter
Abstract:
Silicon carbide (SiC) hosts many interesting defects that can potentially serve as qubits for a range of advanced quantum technologies. Some of them have very interesting properties, making them potentially useful, e.g. as interfaces between stationary and flying qubits. Here we present a detailed overview of the relevant properties of the spins in silicon vacancies of the 6H-SiC polytype. This in…
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Silicon carbide (SiC) hosts many interesting defects that can potentially serve as qubits for a range of advanced quantum technologies. Some of them have very interesting properties, making them potentially useful, e.g. as interfaces between stationary and flying qubits. Here we present a detailed overview of the relevant properties of the spins in silicon vacancies of the 6H-SiC polytype. This includes the temperature-dependent photoluminescence, optically detected magnetic resonance, and the relaxation times of the longitudinal and transverse components of the spins, during free precession as well as under the influence of different refocusing schemes.
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Submitted 28 April, 2020; v1 submitted 19 January, 2020;
originally announced January 2020.
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Excitation and coherent control of spin qudit modes with sub-MHz spectral resolution
Authors:
V. A. Soltamov,
C. Kasper,
A. V. Poshakinskiy,
A. N. Anisimov,
E. N. Mokhov,
A. Sperlich,
S. A. Tarasenko,
P. G. Baranov,
G. V. Astakhov,
V. Dyakonov
Abstract:
Quantum bit or qubit is a two-level system, which builds the foundation for quantum computation, simulation, communication and sensing. Quantum states of higher dimension, i.e., qutrits (D = 3) and especially qudits (D = 4 or higher), offer significant advantages. Particularly, they can provide noise-resistant quantum cryptography, simplify quantum logic and improve quantum metrology. Flying and s…
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Quantum bit or qubit is a two-level system, which builds the foundation for quantum computation, simulation, communication and sensing. Quantum states of higher dimension, i.e., qutrits (D = 3) and especially qudits (D = 4 or higher), offer significant advantages. Particularly, they can provide noise-resistant quantum cryptography, simplify quantum logic and improve quantum metrology. Flying and solid-state qudits have been implemented on the basis of photonic chips and superconducting circuits, respectively. However, there is still a lack of room-temperature qudits with long coherence time and high spectral resolution. The silicon vacancy centers in silicon carbide (SiC) with spin S = 3/2 are quite promising in this respect, but until now they were treated as a canonical qubit system. Here, we apply a two-frequency protocol to excite and image multiple qudit modes in a SiC spin ensemble under ambient conditions. Strikingly, their spectral width is about one order of magnitude narrower than the inhomogeneous broadening of the corresponding spin resonance. By applying Ramsey interferometry to these spin qudits, we achieve a spectral selectivity of 600 kHz and a spectral resolution of 30 kHz. As a practical consequence, we demonstrate absolute DC magnetometry insensitive to thermal noise and strain fluctuations.
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Submitted 26 July, 2018;
originally announced July 2018.
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Optical thermometry based on level anticrossing in silicon carbide
Authors:
A. N. Anisimov,
D. Simin,
V. A. Soltamov,
S. P. Lebedev,
P. G. Baranov,
G. V. Astakhov,
V. Dyakonov
Abstract:
We report a giant thermal shift of $2.1 \,$MHz/K related to the excited-state zero-field splitting in the silicon vacancy centers in 4H silicon carbide. It is obtained from the indirect observation of the optically detected magnetic resonance in the excited state using the ground state as an ancilla. Alternatively, relative variations of the zero-field splitting for small temperature differences c…
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We report a giant thermal shift of $2.1 \,$MHz/K related to the excited-state zero-field splitting in the silicon vacancy centers in 4H silicon carbide. It is obtained from the indirect observation of the optically detected magnetic resonance in the excited state using the ground state as an ancilla. Alternatively, relative variations of the zero-field splitting for small temperature differences can be detected without application of radiofrequency fields, by simply monitoring the photoluminescence intensity in the vicinity of the level anticrossing. This effect results in an all-optical thermometry technique with temperature sensitivity of $100 \,$mK/Hz$^{1/2}$ for a detection volume of approximately $10^{-6} \,$mm$^{3}$. In contrast, the zero-field splitting in the ground state does not reveal detectable temperature shift. Using these properties, an integrated magnetic field and temperature sensor can be implemented on the same center.
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Submitted 21 September, 2016;
originally announced September 2016.
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All-optical dc nanotesla magnetometry using silicon vacancy fine structure in isotopically purified silicon carbide
Authors:
D. Simin,
V. A. Soltamov,
A. V. Poshakinskiy,
A. N. Anisimov,
R. A. Babunts,
D. O. Tolmachev,
E. N. Mokhov,
M. Trupke,
S. A. Tarasenko,
A. Sperlich,
P. G. Baranov,
V. Dyakonov,
G. V. Astakhov
Abstract:
We uncover the fine structure of a silicon vacancy in isotopically purified silicon carbide (4H-$^{28}$SiC) and find extra terms in the spin Hamiltonian, originated from the trigonal pyramidal symmetry of this spin-3/2 color center. These terms give rise to additional spin transitions, which are otherwise forbidden, and lead to a level anticrossing in an external magnetic field. We observe a sharp…
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We uncover the fine structure of a silicon vacancy in isotopically purified silicon carbide (4H-$^{28}$SiC) and find extra terms in the spin Hamiltonian, originated from the trigonal pyramidal symmetry of this spin-3/2 color center. These terms give rise to additional spin transitions, which are otherwise forbidden, and lead to a level anticrossing in an external magnetic field. We observe a sharp variation of the photoluminescence intensity in the vicinity of this level anticrossing, which can be used for a purely all-optical sensing of the magnetic field. We achieve dc magnetic field sensitivity of 87 nT Hz$^{-1/2}$ within a volume of $3 \times 10^{-7}$ mm$^{3}$ at room temperature and demonstrate that this contactless method is robust at high temperatures up to at least 500 K. As our approach does not require application of radiofrequency fields, it is scalable to much larger volumes. For an optimized light-trapping waveguide of 3 mm$^{3}$ the projection noise limit is below 100 fT Hz$^{-1/2}$.
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Submitted 28 May, 2016; v1 submitted 15 November, 2015;
originally announced November 2015.
