High-frequency transport in $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures studied with surface acoustic waves in the quantum Hall regime
Authors:
I. L. Drichko,
A. M. Diakonov,
I. Yu. Smirnov,
G. O. Andrianov,
O. A. Mironov,
M. Myronov,
D. R. Leadley,
T. E. Whall
Abstract:
The interaction of surface acoustic waves (SAW) with $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures has been studied for SAW frequencies of 30-300 MHz. For temperatures in the range 0.7$<T<$1.6 K and magnetic fields up to 7 T, the SAW attenuation coefficient $Γ$ and velocity change $ΔV /V$ were found to oscillate with filling factor. Both the real $σ_1$ and imaginary $σ_2$ components of the…
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The interaction of surface acoustic waves (SAW) with $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures has been studied for SAW frequencies of 30-300 MHz. For temperatures in the range 0.7$<T<$1.6 K and magnetic fields up to 7 T, the SAW attenuation coefficient $Γ$ and velocity change $ΔV /V$ were found to oscillate with filling factor. Both the real $σ_1$ and imaginary $σ_2$ components of the high-frequency conductivity have been determined and compared with quasi-dc magnetoresistance measurements at temperatures down to 33 mK. By analyzing the ratio of $σ_1$ to $σ_2$, carrier localization can be followed as a function of temperature and magnetic field. At $T$=0.7 K, the variations of $Γ$, $ΔV /V$ and $σ_1$ with SAW intensity have been studied and can be explained by heating of the two dimensional hole gas by the SAW electric field. Energy relaxation is found to be dominated by acoustic phonon deformation potential scattering with weak screening.
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Submitted 19 November, 2004;
originally announced November 2004.
Surface Acoustic Waves probe of the p-type Si/SiGe heterostructures
Authors:
G. O. Andrianov,
I. L. Drichko,
A. M. Diakonov,
I. Yu. Smirnov,
O. A. Mironov,
M. Myronov,
T. E. Whall,
D. R. Leadley
Abstract:
The surface acoustic wave (SAWs) attenuation coefficient $Γ$ and the velocity change $ΔV /V$ were measured for $p$-type Si/SiGe heterostructures in the temperature range 0.7 - 1.6 K as a function of external magnetic field $H$ up to 7 T and in the frequency range 30-300 MHz in the hole Si/SiGe heterostructures. Oscillations of $Γ$ (H) and $ΔV /V$ (H) in a magnetic field were observed. Both real…
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The surface acoustic wave (SAWs) attenuation coefficient $Γ$ and the velocity change $ΔV /V$ were measured for $p$-type Si/SiGe heterostructures in the temperature range 0.7 - 1.6 K as a function of external magnetic field $H$ up to 7 T and in the frequency range 30-300 MHz in the hole Si/SiGe heterostructures. Oscillations of $Γ$ (H) and $ΔV /V$ (H) in a magnetic field were observed. Both real $σ_1$ (H) and imaginary $σ_2$ (H) components of the high-frequency conductivity have been determined. Analysis of the $σ_1$ to $σ_2$ ratio allows the carrier localization to be followed as a function of temperature and magnetic field. At T=0.7 K the variation of $Γ$, $ΔV /V$ and $σ_1$ with SAW intensity have been studied and could be attributed to 2DHG heating by the SAW electric field. The energy relaxation time is found to be dominated by scattering at the deformation potential of the acoustic phonons with weak screening.
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Submitted 30 January, 2004;
originally announced January 2004.
