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Ultimate sharpness of the tunneling resonance in vertical heterostructures
Authors:
Georgy Alymov,
Dmitry Svintsov
Abstract:
Heterostructures comprised of two two-dimensional electron systems (2DES) separated by a dielectric exhibit resonant tunneling when the band structures of both systems are aligned. It is commonly assumed that the height and width of the resonant peak in the tunneling current is determined by electron scattering and rotational misalignment of crystal structures of the 2DES. We identify two fundamen…
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Heterostructures comprised of two two-dimensional electron systems (2DES) separated by a dielectric exhibit resonant tunneling when the band structures of both systems are aligned. It is commonly assumed that the height and width of the resonant peak in the tunneling current is determined by electron scattering and rotational misalignment of crystal structures of the 2DES. We identify two fundamental factors limiting the maximum height and steepness of the resonance: coupling to contacts and tunnel splitting of energy levels. The upper limit of the tunneling current is the number of electrons available for tunneling times half the tunnel coupling between the 2DES. As a result of a tradeoff between the contact-induced level broadening and contact resistance, the maximum current is only achievable when the coupling to contacts equals the tunnel level splitting. According to our model calculations, the limiting behavior can be observed in double-gated graphene/few-layer hexagonal boron nitride/graphene heterostructures.
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Submitted 11 October, 2023;
originally announced October 2023.
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Refraction laws for two-dimensional plasmons
Authors:
Dmitry Svintsov,
Georgy Alymov
Abstract:
Despite numerous applications of two-dimensional plasmons for electromagnetic energy manipulation at the nanoscale, their quantitative refraction and reflection laws (analogs of Fresnel formulas in optics) have not yet been established. This fact can be traced down to the strong non-locality of equations governing the 2d plasmon propagation. Here, we tackle this difficulty by direct solution of pl…
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Despite numerous applications of two-dimensional plasmons for electromagnetic energy manipulation at the nanoscale, their quantitative refraction and reflection laws (analogs of Fresnel formulas in optics) have not yet been established. This fact can be traced down to the strong non-locality of equations governing the 2d plasmon propagation. Here, we tackle this difficulty by direct solution of plasmon scattering problem with Wiener-Hopf technique. We obtain the reflection and transmission coefficients for 2d plasmons at the discontinuity of 2d conductivity at arbitrary incidence angle, for both gated and non-gated 2d systems. At a certain incidence angle, the absolute reflectivity has a pronounced dip reaching zero for gated plasmons. The dip is associated with wave passage causing no dynamic charge accumulation at the boundary. For all incidence angles, the reflection has a non-trivial phase different from zero and $π$.
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Submitted 23 May, 2023;
originally announced May 2023.
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Ultralow-noise terahertz detection by p-n junctions in gapped bilayer graphene
Authors:
Elena Titova,
Dmitry Mylnikov,
Mikhail Kashchenko,
Sergey Zhukov,
Kirill Dzhikirba,
Kostya Novoselov,
Denis Bandurin,
Georgy Alymov,
Dmitry Svintsov
Abstract:
Graphene shows a strong promise for detection of terahertz (THz) radiation due to its high carrier mobility, compatibility with on-chip waveguides and transistors, and small heat capacitance. At the same time, weak reaction of graphene's physical properties on the detected radiation can be traced down to the absence of band gap. Here, we study the effect of electrically-induced band gap on THz det…
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Graphene shows a strong promise for detection of terahertz (THz) radiation due to its high carrier mobility, compatibility with on-chip waveguides and transistors, and small heat capacitance. At the same time, weak reaction of graphene's physical properties on the detected radiation can be traced down to the absence of band gap. Here, we study the effect of electrically-induced band gap on THz detection in graphene bilayer with split-gate p-n junction. We show that gap induction leads to simultaneous increase in current and voltage responsivities. At operating temperatures of ~25 K, the responsivity at 20 meV band gap is from 3 to 20 times larger than that in the gapless state. The maximum voltage responsivity of our devices at 0.13 THz illumination exceeds 50 kV/W, while the noise equivalent power falls down to 36 fW/Hz^0.5. These values set new records for semiconductor-based cryogenic terahertz detectors, and pave the way for efficient and fast terahertz detection.
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Submitted 10 December, 2022;
originally announced December 2022.
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One-dimensional electron localization in semiconductors coupled to electromagnetic cavities
Authors:
Dmitry Svintsov,
Georgy Alymov,
Zhanna Devizorova,
Luis Martin-Moreno
Abstract:
Electrical conductivity of one-dimensional (1d) disordered solids decays exponentially with their length, which is a celebrated manifestation of the localization phenomenon. Here, we study the modifications of localized conductivity induced by placement of 1d semiconductors inside of single-mode electromagnetic cavities, focusing on the regime of non-degenerate doping. We use the Green's function…
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Electrical conductivity of one-dimensional (1d) disordered solids decays exponentially with their length, which is a celebrated manifestation of the localization phenomenon. Here, we study the modifications of localized conductivity induced by placement of 1d semiconductors inside of single-mode electromagnetic cavities, focusing on the regime of non-degenerate doping. We use the Green's function technique modified for the non-perturbative account of cavity excited states, and including both coherent electron-cavity effects (i.e. electron motion in the zero-point fluctuating field) and incoherent processes of photon emission upon tunneling. The energy spectrum of electron transmission in the cavity acquires Fano-type resonances associated with virtual photon emission, passage along the resonant level, and photon re-absorption. The quality factor of the Fano resonance depends on whether the intermediate state is coupled to the leads, and reaches its maximum when this state is localized deep in the disorder potential. Coupling to the cavity also elevates the energies of the shallow bound states, bringing them to the conduction band bottom. Such an effect leads to the enhancement of the low-temperature conductance.
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Submitted 27 November, 2023; v1 submitted 23 November, 2022;
originally announced November 2022.
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Plasmon recombination in narrowgap HgTe quantum wells
Authors:
V Ya Aleshkin,
G Alymov,
A A Dubinov,
V I Gavrilenko,
F Teppe
Abstract:
The dispersion laws of two-dimensional plasmons in narrow-gap HgTe/CdHgTe quantum wells are calculated taking into account the spatial dispersion of the electron susceptibility. At the energy scale of the band gap the dependence of plasmon frequencies on the wave vector is shown to be close to linear that changes significantly the critical concentration of noneqilibrium electron-hole gas correspon…
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The dispersion laws of two-dimensional plasmons in narrow-gap HgTe/CdHgTe quantum wells are calculated taking into account the spatial dispersion of the electron susceptibility. At the energy scale of the band gap the dependence of plasmon frequencies on the wave vector is shown to be close to linear that changes significantly the critical concentration of noneqilibrium electron-hole gas corresponding to "switching-on" the carrier recombination with plasmon emission. The recombination rates with the plasmon emission have been calculated.
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Submitted 30 October, 2020;
originally announced October 2020.
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Feasibility of lasing in the GaAs Reststrahlen band with HgTe multiple quantum well laser diodes
Authors:
Aleksandr Afonenko,
Dmitry Ushakov,
Georgy Alymov,
Aleksandr Dubinov,
Sergey Morozov,
Vladimir Gavrilenko,
Dmitry Svintsov
Abstract:
Operation of semiconductor lasers in the 20--50 $μ$m wavelength range is hindered by strong non-radiative recombination in the interband laser diodes, and strong lattice absorption in GaAs-based quantum cascade structures. Here, we propose an electrically pumped laser diode based on multiple HgTe quantum wells with band structure engineered for Auger recombination suppression. Using a comprehensiv…
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Operation of semiconductor lasers in the 20--50 $μ$m wavelength range is hindered by strong non-radiative recombination in the interband laser diodes, and strong lattice absorption in GaAs-based quantum cascade structures. Here, we propose an electrically pumped laser diode based on multiple HgTe quantum wells with band structure engineered for Auger recombination suppression. Using a comprehensive model accounting for carrier drift and diffusion, electron and hole capture in quantum wells, Auger recombination, and heating effects, we show the feasibility of lasing at $λ= 26...30$ $μ$m at temperatures up to 90 K. The output power in the pulse can reach up to 8 mW for microsecond-duration pulses.
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Submitted 27 October, 2020;
originally announced October 2020.
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Auger recombination in narrow band quantum well CdxHg1-xTe/CdyHg1-yTe heterostructures
Authors:
V. Ya. Aleshkin,
G. Alymov,
A. V. Antonov,
A. A. Dubinov,
V. V. Rumyantsev,
S. V. Morozov
Abstract:
We present detailed theoretical and experimental studies of Auger recombination in narrow-gap mercury cadmium telluride quantum wells (HgCdTe QWs). We calculate the Auger recombination probabilities as functions of non-equilibrium carrier density, temperature and composition of quantum wells taking into account the complex band dispersions and wave functions of the structures. Our theory is valida…
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We present detailed theoretical and experimental studies of Auger recombination in narrow-gap mercury cadmium telluride quantum wells (HgCdTe QWs). We calculate the Auger recombination probabilities as functions of non-equilibrium carrier density, temperature and composition of quantum wells taking into account the complex band dispersions and wave functions of the structures. Our theory is validated by comparison with measured kinetics of photoconductivity relaxation in QW with band gap of 76 meV at a temperature of 77 K. We find good agreement of theory and experiment using a single fitting parameter: the initial density of non-equilibrium carriers. The model is further used to optimize the composition of QWs and find the most suitable conditions for far-infrared lasing. Particularly, for band gap of 40 meV (lasing wavelength λ=31 μm) the lasing is favored in QWs with 6.5% cadmium fraction. We also find that at very large non-equilibrium carrier densities, the main recombination channel is associated with emission of two-dimensional plasmons and not with Auger process
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Submitted 22 October, 2020;
originally announced October 2020.
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Tunnel field-effect transistors for sensitive terahertz detection
Authors:
Igor Gayduchenko,
Shuigang Xu,
Georgy Alymov,
Maxim Moskotin,
Ivan Tretyakov,
Takashi Taniguchi,
Kenji Watanabe,
Gregory Goltsman,
Andre K. Geim,
Georgy Fedorov,
Dmitry Svintsov,
Denis A. Bandurin
Abstract:
The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here we address this…
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The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG's electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high-responsivity (> 4 kV/W) and low-noise (0.2 pW/$\sqrt{\mathrm{Hz}}$}) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors' responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor.
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Submitted 4 January, 2021; v1 submitted 6 October, 2020;
originally announced October 2020.
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Fundamental limits to far-infrared lasing in Auger-suppressed HgCdTe quantum wells
Authors:
Georgy Alymov,
Vladimir Rumyantsev,
Sergey Morozov,
Vladimir Gavrilenko,
Vladimir Aleshkin,
Dmitry Svintsov
Abstract:
A challenge of bridging the terahertz gap with semiconductor lasers faces an inevitable problem of enhanced non-radiative Auger recombination with reduction of photon energy. We show that this problem can be mitigated in mercury-cadmium-telluride quantum wells (HgCdTe QWs) wherein the Auger process is suppressed due to formation of quasi-relativistic electron-hole dispersion imposing strong energy…
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A challenge of bridging the terahertz gap with semiconductor lasers faces an inevitable problem of enhanced non-radiative Auger recombination with reduction of photon energy. We show that this problem can be mitigated in mercury-cadmium-telluride quantum wells (HgCdTe QWs) wherein the Auger process is suppressed due to formation of quasi-relativistic electron-hole dispersion imposing strong energy-momentum restrictions on recombining carriers. Such dispersion is formed upon interaction of topological states at the two QW interfaces. We characterize the lasing properties of HgCdTe QWs quantitatively by constructing a microscopic theory for recombination, absorption, and gain, and show the feasibility of lasing down to ~ 50 $μ$m at liquid nitrogen temperature with threshold currents two orders of magnitude lower than in existing lasers. Our findings comply with recent experimental data on stimulated far-infrared emission from HgCdTe QWs and show the directions toward achievement of maximum possible lasing wavelength.
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Submitted 9 August, 2019;
originally announced August 2019.
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Auger recombination in Dirac materials: A tangle of many-body effects
Authors:
Georgy Alymov,
Vladimir Vyurkov,
Victor Ryzhii,
Akira Satou,
Dmitry Svintsov
Abstract:
The peculiar electron dispersion in Dirac materials makes lowest-order Auger processes prohibited or marginally prohibited by energy and momentum conservation laws. Thus, Auger recombination (AR) in these materials is very sensitive to many-body effects. We incorporate them at the level of the $GW$ approximation into the nonequilibrium Green's functions approach to AR and study the role of dynamic…
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The peculiar electron dispersion in Dirac materials makes lowest-order Auger processes prohibited or marginally prohibited by energy and momentum conservation laws. Thus, Auger recombination (AR) in these materials is very sensitive to many-body effects. We incorporate them at the level of the $GW$ approximation into the nonequilibrium Green's functions approach to AR and study the role of dynamic screening, spectrum broadening and renormalization in the case of weakly pumped undoped graphene. We find that incorrect treatment of many-body effects can lead to an order-of-magnitude error in the recombination rate. We show that the AR time weakly (sublinearly) depends on the background dielectric constant, which limits the possibility to control recombination by the choice of substrate. However, the AR time can be considerably prolonged by placing graphene under a metal gate or by introducing a bandgap. With carrier cooling taken into account, our results comply with experiments on photoexcited graphene.
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Submitted 20 May, 2018; v1 submitted 26 September, 2017;
originally announced September 2017.
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Abrupt current switching in graphene bilayer tunnel transistors enabled by van Hove singularities
Authors:
G. Alymov,
V. Vyurkov,
V. Ryzhii,
D. Svintsov
Abstract:
In a continuous search for the energy-efficient electronic switches, a great attention is focused on tunnel field-effect transistors (TFETs) demonstrating an abrupt dependence of the source-drain current on the gate voltage. Among all TFETs, those based on one-dimensional (1D) semiconductors exhibit the steepest current switching due to the singular density of states near the band edges, though th…
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In a continuous search for the energy-efficient electronic switches, a great attention is focused on tunnel field-effect transistors (TFETs) demonstrating an abrupt dependence of the source-drain current on the gate voltage. Among all TFETs, those based on one-dimensional (1D) semiconductors exhibit the steepest current switching due to the singular density of states near the band edges, though the current in 1D structures is pretty low. In this paper, we propose a TFET based on 2D graphene bilayer which demonstrates a record steep subthreshold slope enabled by van Hove singularities in the density of states near the edges of conduction and valence bands. Our simulations show the accessibility of 3.5 x 10$^4$ ON/OFF current ratio with 150 mV gate voltage swing, and a maximum subthreshold slope of (20 μV/dec)$^{-1}$ just above the threshold. The high ON-state current of 0.8 mA/μm is enabled by a narrow (~ 0.3 eV) extrinsic band gap, while the smallness of the leakage current is due to an all-electrical doping of the source and drain contacts which suppresses the band-tailing and trap-assisted tunneling.
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Submitted 16 January, 2016; v1 submitted 9 August, 2015;
originally announced August 2015.
