Showing 1–25 of 25 results for author: Allen, S J

Coherent phenomena in terahertz 2D plasmonic structures: strong coupling, plasmonic crystals, and induced transparency by coupling of localized modes

Authors: Gregory C. Dyer, Gregory R. Aizin, S. James Allen, Albert D. Grine, Don Bethke, John L. Reno, Eric A. Shaner

Abstract: The device applications of plasmonic systems such as graphene and two dimensional electron gases (2DEGs) in III-V heterostructures include terahertz detectors, mixers, oscillators and modulators. These two dimensional (2D) plasmonic systems are not only well-suited for device integration, but also enable the broad tunability of underdamped plasma excitations via an applied electric field. We prese… ▽ More The device applications of plasmonic systems such as graphene and two dimensional electron gases (2DEGs) in III-V heterostructures include terahertz detectors, mixers, oscillators and modulators. These two dimensional (2D) plasmonic systems are not only well-suited for device integration, but also enable the broad tunability of underdamped plasma excitations via an applied electric field. We present demonstrations of the coherent coupling of multiple voltage tuned GaAs/AlGaAs 2D plasmonic resonators under terahertz irradiation. By utilizing a plasmonic homodyne mixing mechanism to downconvert the near field of plasma waves to a DC signal, we directly detect the spectrum of coupled plasmonic micro-resonator structures at cryogenic temperatures. The 2DEG in the studied devices can be interpreted as a plasmonic waveguide where multiple gate terminals control the 2DEG kinetic inductance. When the gate tuning of the 2DEG is spatially periodic, a one-dimensional finite plasmonic crystal forms. This results in a subwavelength structure, much like a metamaterial element, that nonetheless Bragg scatters plasma waves from a repeated crystal unit cell. A 50% in situ tuning of the plasmonic crystal band edges is observed. By introducing gate-controlled defects or simply terminating the lattice, localized states arise in the plasmonic crystal. Inherent asymmetries at the finite crystal boundaries produce an induced transparency-like phenomenon due to the coupling of defect modes and crystal surface states known as Tamm states. The demonstrated active control of coupled plasmonic resonators opens previously unexplored avenues for sensitive direct and heterodyne THz detection, planar metamaterials, and slow-light devices. △ Less

Submitted 10 May, 2016; originally announced May 2016.

Journal ref: Proc. of SPIE 9102, 91020L (2014)

Interferometric Measurement of Far Infrared Plasmons via Resonant Homodyne Mixing

Authors: Gregory C. Dyer, Gregory R. Aizin, S. James Allen, Albert D. Grine, Don Bethke, John L. Reno, Eric A. Shaner

Abstract: We present an electrically tunable terahertz two dimensional plasmonic interferometer with an integrated detection element that down converts the terahertz fields to a DC signal. The integrated detector utilizes a resonant plasmonic homodyne mixing mechanism that measures the component of the plasma waves in-phase with an excitation field functioning as the local oscillator. Plasmonic interferomet… ▽ More We present an electrically tunable terahertz two dimensional plasmonic interferometer with an integrated detection element that down converts the terahertz fields to a DC signal. The integrated detector utilizes a resonant plasmonic homodyne mixing mechanism that measures the component of the plasma waves in-phase with an excitation field functioning as the local oscillator. Plasmonic interferometers with two independently tuned paths are studied. These devices demonstrate a means for developing a spectrometer-on-a-chip where the tuning of electrical length plays a role analogous to that of physical path length in macroscopic Fourier transform interferometers. △ Less

Submitted 10 May, 2016; originally announced May 2016.

Journal ref: Opt. Express 22, 16254-16266 (2014)

Induced transparency by coupling of Tamm and defect states in tunable terahertz plasmonic crystals

Authors: Gregory C. Dyer, Gregory R. Aizin, S. James Allen, Albert D. Grine, Don Bethke, John L. Reno, Eric A. Shaner

Abstract: Photonic crystals and metamaterials have emerged as two classes of tailorable materials that enable precise control of light. Plasmonic crystals, which can be thought of as photonic crystals fabricated from plasmonic materials, Bragg scatter incident electromagnetic waves from a repeated unit cell. However, plasmonic crystals, like metamaterials, are composed of subwavelength unit cells. Here, we… ▽ More Photonic crystals and metamaterials have emerged as two classes of tailorable materials that enable precise control of light. Plasmonic crystals, which can be thought of as photonic crystals fabricated from plasmonic materials, Bragg scatter incident electromagnetic waves from a repeated unit cell. However, plasmonic crystals, like metamaterials, are composed of subwavelength unit cells. Here, we study terahertz plasmonic crystals of several periods in a two dimensional electron gas. This plasmonic medium is both extremely subwavelength ($\approx λ/100$) and reconfigurable through the application of voltages to metal electrodes. Weakly localized crystal surface states known as Tamm states are observed. By introducing an independently controlled plasmonic defect that interacts with the Tamm states, we demonstrate a frequency agile electromagnetically induced transparency phenomenon. The observed 50% ${\it in-situ}$ tuning of the plasmonic crystal band edges should be realizable in materials such as graphene to actively control the plasmonic crystal dispersion in the infrared. △ Less

Submitted 10 May, 2016; originally announced May 2016.

Journal ref: Nature Photon. 7, 925-930 (2013)

Inducing an Incipient Terahertz Finite Plasmonic Crystal in Coupled Two Dimensional Plasmonic Cavities

Authors: Gregory C. Dyer, Gregory R. Aizin, Sascha Preu, N. Q. Vinh, S. James Allen, John L. Reno, Eric A. Shaner

Abstract: We measured a change in the current transport of an antenna-coupled, multi-gate, GaAs/AlGaAs field-effect transistor when terahertz electromagnetic waves irradiated the transistor and attribute the change to bolometric heating of the electrons in the two-dimensional electron channel. The observed terahertz absorption spectrum indicates coherence between plasmons excited under adjacent biased devic… ▽ More We measured a change in the current transport of an antenna-coupled, multi-gate, GaAs/AlGaAs field-effect transistor when terahertz electromagnetic waves irradiated the transistor and attribute the change to bolometric heating of the electrons in the two-dimensional electron channel. The observed terahertz absorption spectrum indicates coherence between plasmons excited under adjacent biased device gates. The experimental results agree quantitatively with a theoretical model we developed that is based on a generalized plasmonic transmission line formalism and describes an evolution of the plasmonic spectrum with increasing electron density modulation from homogeneous to the crystal limit. These results demonstrate an electronically induced and dynamically tunable plasmonic band structure. △ Less

Submitted 10 May, 2016; originally announced May 2016.

Journal ref: Phys. Rev. Lett. 109, 126803 (2012)

High-precision gigahertz-to-terahertz spectroscopy of aqueous salt solutions as a probe of the femtosecond-to-picosecond dynamics of liquid water

Authors: N. Q. Vinh, Mark S. Sherwin, S. James Allen, D. K. George, A. J. Rahmani, Kevin. W. Plaxco

Abstract: Because it is sensitive to fluctuations occurring over femtoseconds to picoseconds, gigahertz-to-terahertz dielectric relaxation spectroscopy can provide a valuable window into water's most rapid intermolecular motions. In response, we have built a vector network analyzer dielectric spectrometer capable of measuring absorbance and index of refraction in this frequency regime with unprecedented pre… ▽ More Because it is sensitive to fluctuations occurring over femtoseconds to picoseconds, gigahertz-to-terahertz dielectric relaxation spectroscopy can provide a valuable window into water's most rapid intermolecular motions. In response, we have built a vector network analyzer dielectric spectrometer capable of measuring absorbance and index of refraction in this frequency regime with unprecedented precision. Using this to determine the complex dielectric response of water and aqueous salt solutions from 5.9 GHz to 1.12 THz (which we provide in the SI), we have obtained strong new constraints on theories of water's collective dynamics. For example, while the salt-dependencies we observe for water's two slower relaxations (8 and 1 ps) are easily reconciled with suggestions that they arise due to rotations of fully and partially hydrogen bonded molecules, respectively, the salt-dependence of the fastest relaxation (180 fs) appears difficult to reconcile with its prior assignment to liberations of single hydrogen bonds. △ Less

Submitted 26 May, 2015; originally announced May 2015.

Comments: 14 pages, 3 figures, Published in Journal of Chemical Physics

Journal ref: Published in Journal of Chemical Physics, Vol 142, 164502 (2015)

High-density two-dimensional small polaron gas in a delta-doped Mott insulator

Authors: Daniel G. Ouellette, Pouya Moetakef, Tyler A. Cain, Jack Y. Zhang, Susanne Stemmer, David Emin, S. James Allen

Abstract: Heterointerfaces in complex oxide systems open new arenas in which to test models of strongly correlated material, explore the role of dimensionality in metal-insulator-transitions (MITs) and small polaron formation. Close to the quantum critical point Mott MITs depend on band filling controlled by random disordered substitutional doping. Delta-doped Mott insulators are potentially free of random… ▽ More Heterointerfaces in complex oxide systems open new arenas in which to test models of strongly correlated material, explore the role of dimensionality in metal-insulator-transitions (MITs) and small polaron formation. Close to the quantum critical point Mott MITs depend on band filling controlled by random disordered substitutional doping. Delta-doped Mott insulators are potentially free of random disorder and introduce a new arena in which to explore the effect of electron correlations and dimensionality. Epitaxial films of the prototypical Mott insulator GdTiO3 are delta-doped by substituting a single (GdO)+1 plane with a monolayer of charge neutral SrO to produce a two-dimensional system with high planar doping density. Unlike metallic SrTiO3 quantum wells in GdTiO3 the single SrO delta-doped layer exhibits thermally activated DC and optical conductivity that agree in a quantitative manner with predictions of small polaron transport but with an extremely high two-dimensional density of polarons, ~ 7E14 cm-2 △ Less

Submitted 9 April, 2014; originally announced April 2014.

Journal ref: Scientific Reports Vol. 3, 3284 (2013)

Gaps and pseudo-gaps at the Mott quantum Critical point in the perovskite rare earth nickelates

Authors: S. James Allen, Adam J. Hauser, Evgeny Mikheev, Jack Y. Zhang, Nelson E. Moreno, Junwoo Son, Daniel G. Ouellette, James Kally, Alex Kozhanov, Leon Balents, Susanne Stemmer

Abstract: We report on tunneling measurements that reveal for the first time the evolution of the quasi-particle state density across the bandwidth controlled Mott metal to insulator transition in the rare earth perovskite nickelates. In this, a canonical class of transition metal oxides, we study in particular two materials close to the T=0 metal-insulator transition: NdNiO3 , an antiferromagnetic insulato… ▽ More We report on tunneling measurements that reveal for the first time the evolution of the quasi-particle state density across the bandwidth controlled Mott metal to insulator transition in the rare earth perovskite nickelates. In this, a canonical class of transition metal oxides, we study in particular two materials close to the T=0 metal-insulator transition: NdNiO3 , an antiferromagnetic insulator, and LaNiO3, a correlated metal. We measure a sharp gap in NdNiO3, which has an insulating ground state, of ~ 30 meV. Remarkably, metallic LaNiO3 exhibits a pseudogap of the same order that presages the metal insulator transition. The smallness of both the gap and pseudogap suggests they arise from a common origin: proximity to a quantum critical point at or near the T=0 metal-insulator transition. It also supports theoretical models of the quantum phase transition in terms of spin and charge instabilities of an itinerant Fermi surface. △ Less

Submitted 9 April, 2014; originally announced April 2014.

Comments: 5 figures, 22 pages

Subband structure of two-dimensional electron gases in SrTiO3

Authors: Santosh Raghavan, S. James Allen, Susanne Stemmer

Abstract: Tunneling between two parallel, two-dimensional electron gases (2DEGs) in a complex oxide heterostructure containing a large, mobile electron density of ~ 3x10^14 cm^-2 is used to probe the subband structure of the 2DEGs. Temperature-dependent current-voltage measurements are performed on SrTiO3/GdTiO3/SrTiO3 junctions, where GdTiO3 serves as the tunnel barrier, and each interface contains a high-… ▽ More Tunneling between two parallel, two-dimensional electron gases (2DEGs) in a complex oxide heterostructure containing a large, mobile electron density of ~ 3x10^14 cm^-2 is used to probe the subband structure of the 2DEGs. Temperature-dependent current-voltage measurements are performed on SrTiO3/GdTiO3/SrTiO3 junctions, where GdTiO3 serves as the tunnel barrier, and each interface contains a high-density 2DEG. Resonant tunneling features in the conductance and its derivative occur when subbands on either side of the barrier align in energy as the applied bias is changed, and are used to analyze subband energy spacings in the two 2DEGs. We show that the results agree substantially with recent theoretical predictions for such interfaces. △ Less

Submitted 30 October, 2013; originally announced October 2013.

Comments: Submitted to Appl. Phys. Lett

Journal ref: Appl. Phys. Lett. 103, 212103 (2013)

Shubnikov-de Haas effect in low electron density SrTiO3: Conduction band edge of SrTiO3 redux

Authors: S James Allen, Bharat Jalan, SungBin Lee, Daniel G. Ouellette, Guru Khalsa, Jan Jaroszynski, Susanne Stemmer, Allan H. MacDonald

Abstract: The Shubnikov-de Haas effect is used to explore the conduction band edge of high mobility SrTiO3 films doped with La. The results largely confirm the earlier measurements by Uwe et al. [Jap. J. Appl. Phys. 24, Suppl. 24-2, 335 (1985)]. The band edge dispersion differs significantly from the predictions of ab initio electronic structure theory. The Shubnikov-de Haas effect is used to explore the conduction band edge of high mobility SrTiO3 films doped with La. The results largely confirm the earlier measurements by Uwe et al. [Jap. J. Appl. Phys. 24, Suppl. 24-2, 335 (1985)]. The band edge dispersion differs significantly from the predictions of ab initio electronic structure theory. △ Less

Submitted 29 April, 2013; originally announced April 2013.

Journal ref: Phys. Rev. B Vol.: 88 045114 (2013)

Spin Wave Scattering in Ferromagnetic Cross

Authors: Alexander Kozhanov, Alexander Anferov, Ajey P. Jacob, S. James Allen

Abstract: Spin wave scattering in the right angle ferromagnetic cross was measured. Shape anisotropy defined magnetization ground states at zero biasing magnetic fields. Scattering of the spin waves in the center of ferromagnetic cross is strongly dependent on the amplitude and angle of the biasing magnetic field. Micromagnetic simulations indicate that low in-plane biasing magnetic fields rotate the magnet… ▽ More Spin wave scattering in the right angle ferromagnetic cross was measured. Shape anisotropy defined magnetization ground states at zero biasing magnetic fields. Scattering of the spin waves in the center of ferromagnetic cross is strongly dependent on the amplitude and angle of the biasing magnetic field. Micromagnetic simulations indicate that low in-plane biasing magnetic fields rotate the magnetization of the cross center while the arms stay axially magnetized due to the shape anisotropy. We discuss effect of biasing magnetic fields on the spin wave scattering and approaches to an effective spin wave switch based on the fabricated structure. △ Less

Submitted 6 November, 2012; originally announced November 2012.

Comments: 4 pages, 2 figures

Toward an artificial Mott insulator: Correlations in confined, high-density electron liquids in SrTiO3

Authors: Pouya Moetakef, Clayton A. Jackson, Jinwoo Hwang, Leon Balents, S. James Allen, Susanne Stemmer

Abstract: We investigate correlation physics in high-density, two-dimensional electron liquids that reside in narrow SrTiO3 quantum wells. The quantum wells are remotely doped via an interfacial polar discontinuity and the three-dimensional (3D) carrier density is modulated by changing the width of the quantum well. It is shown that even at 3D densities well below one electron per site, short-range Coulomb… ▽ More We investigate correlation physics in high-density, two-dimensional electron liquids that reside in narrow SrTiO3 quantum wells. The quantum wells are remotely doped via an interfacial polar discontinuity and the three-dimensional (3D) carrier density is modulated by changing the width of the quantum well. It is shown that even at 3D densities well below one electron per site, short-range Coulomb interactions become apparent in transport, and an insulating state emerges at a critical density. We also discuss the role of disorder in the insulating state. △ Less

Submitted 28 October, 2012; originally announced October 2012.

Comments: Accepted for publication in Physical Review B (Rapid Communication)

Journal ref: Physical Review B 86, 201102(R) (2012)

Quantum oscillations from a two-dimensional electron gas at a Mott/band insulator interface

Authors: Pouya Moetakef, Daniel G. Ouellette, James R. Williams, S. James Allen, Leon Balents, David Goldhaber-Gordon, Susanne Stemmer

Abstract: We report on the magnetotransport properties of a prototype Mott insulator/band insulator perovskite heterojunction in magnetic fields up to 31 T and at temperatures between 360 mK and 10 K. Shubnikov-de Haas oscillations in the magnetoresistance are observed. The oscillations are two-dimensional in nature and are interpreted as arising from either a single, spin-split subband or two subbands. In… ▽ More We report on the magnetotransport properties of a prototype Mott insulator/band insulator perovskite heterojunction in magnetic fields up to 31 T and at temperatures between 360 mK and 10 K. Shubnikov-de Haas oscillations in the magnetoresistance are observed. The oscillations are two-dimensional in nature and are interpreted as arising from either a single, spin-split subband or two subbands. In either case, the electron system that gives rise to the oscillations represents only a fraction of the electrons in the space charge layer at the interface. The temperature dependence of the oscillations are used to extract an effective mass of ~ 1 me for the subband(s). The results are discussed in the context of the t2g-states that form the bottom of the conduction band of SrTiO3. △ Less

Submitted 28 September, 2012; originally announced September 2012.

Comments: The following article has been accepted by Applied Physics Letters. After it is published, it will be found at http://apl.aip.org

Carrier-controlled ferromagnetism in SrTiO3

Authors: Pouya Moetakef, James R. Williams, Daniel G. Ouellette, Adam Kajdos, David Goldhaber-Gordon, S. James Allen, Susanne Stemmer

Abstract: Magnetotransport and superconducting properties are investigated for uniformly La-doped SrTiO3 films and GdTiO3/SrTiO3 heterostructures, respectively. GdTiO3/SrTiO3 interfaces exhibit a high-density two-dimensional electron gas on the SrTiO3-side of the interface, while for the SrTiO3 films carriers are provided by the dopant atoms. Both types of samples exhibit ferromagnetism at low temperatures,… ▽ More Magnetotransport and superconducting properties are investigated for uniformly La-doped SrTiO3 films and GdTiO3/SrTiO3 heterostructures, respectively. GdTiO3/SrTiO3 interfaces exhibit a high-density two-dimensional electron gas on the SrTiO3-side of the interface, while for the SrTiO3 films carriers are provided by the dopant atoms. Both types of samples exhibit ferromagnetism at low temperatures, as evidenced by a hysteresis in the magnetoresistance. For the uniformly doped SrTiO3 films, the Curie temperature is found to increase with doping and to coexist with superconductivity for carrier concentrations on the high-density side of the superconducting dome. The Curie temperature of the GdTiO3/SrTiO3 heterostructures scales with the thickness of the SrTiO3 quantum well. The results are used to construct a stability diagram for the ferromagnetic and superconducting phases of SrTiO3. △ Less

Submitted 27 August, 2012; v1 submitted 4 April, 2012; originally announced April 2012.

Comments: Revised version that is closer to the published version; Fig. 2 corrected

Journal ref: Phys. Rev. X 2, 021014 (2012)

Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces

Authors: Pouya Moetakef, Tyler A. Cain, Daniel G. Ouellette, Jack Y. Zhang, Dmitri O. Klenov, Anderson Janotti, Chris G. Van de Walle, Siddharth Rajan, S. James Allen, Susanne Stemmer

Abstract: Heterostructures and superlattices consisting of a prototype Mott insulator, GdTiO3, and the band insulator SrTiO3 are grown by molecular beam epitaxy and show intrinsic electronic reconstruction, approximately 1/2 electron per surface unit cell at each GdTiO3/SrTiO3 interface. The sheet carrier densities in all structures containing more than one unit cell of SrTiO3 are independent of layer thick… ▽ More Heterostructures and superlattices consisting of a prototype Mott insulator, GdTiO3, and the band insulator SrTiO3 are grown by molecular beam epitaxy and show intrinsic electronic reconstruction, approximately 1/2 electron per surface unit cell at each GdTiO3/SrTiO3 interface. The sheet carrier densities in all structures containing more than one unit cell of SrTiO3 are independent of layer thicknesses and growth sequences, indicating that the mobile carriers are in a high concentration, two-dimensional electron gas bound to the interface. These carrier densities closely meet the electrostatic requirements for compensating the fixed charge at these polar interfaces. Based on the experimental results, insights into interfacial band alignments, charge distribution and the influence of different electrostatic boundary conditions are obtained. △ Less

Submitted 20 November, 2011; originally announced November 2011.

Comments: The article has been accepted by Applied Physics Letters. After it is published, it will be found at http://apl.aip.org/

Probing the metal-insulator transition of NdNiO3 by electrostatic doping

Authors: Junwoo Son, Bharat Jalan, Adam P. Kajdos, Leon Balents, S. James Allen, Susanne Stemmer

Abstract: Modulation of the charge carrier density in a Mott material by remote doping from a highly doped conventional band insulator is proposed to test theoretical predictions of band filling control of the Mott metal-insulator transition without introducing lattice distortions or disorder, as is the case for chemical doping. The approach is experimentally tested using ultrathin (2.5 nm) NdNiO3 films tha… ▽ More Modulation of the charge carrier density in a Mott material by remote doping from a highly doped conventional band insulator is proposed to test theoretical predictions of band filling control of the Mott metal-insulator transition without introducing lattice distortions or disorder, as is the case for chemical doping. The approach is experimentally tested using ultrathin (2.5 nm) NdNiO3 films that are epitaxially grown on La-doped SrTiO3 films. We show that remote doping systematically changes the charge carrier density in the NdNiO3 film and causes a moderate shift in the metal-insulator transition temperature. These results are discussed in the context of theoretical models of this class of materials exhibiting a metal-insulator transition. △ Less

Submitted 18 October, 2011; originally announced October 2011.

Comments: The article has been accepted by Applied Physics Letters. After it is published, it will be found at http://apl.aip.org/

Journal ref: Appl. Phys. Lett. 99, 192107 (2011)

A heterojunction modulation-doped Mott transistor

Authors: Junwoo Son, Siddharth Rajan, Susanne Stemmer, S. James Allen

Abstract: A heterojunction Mott field effect transistor (FET) is proposed that consists of an epitaxial channel material that exhibits an electron-correlation-induced Mott metal-to-insulator transition. The Mott material is remotely (modulation) doped with a degenerately doped conventional band insulator. An applied voltage modulates the electron transfer from the doped band insulator to the Mott material a… ▽ More A heterojunction Mott field effect transistor (FET) is proposed that consists of an epitaxial channel material that exhibits an electron-correlation-induced Mott metal-to-insulator transition. The Mott material is remotely (modulation) doped with a degenerately doped conventional band insulator. An applied voltage modulates the electron transfer from the doped band insulator to the Mott material and produces transistor action by inducing an insulator-to-metal transition. Materials parameters from rare-earth nickelates and SrTiO3 are used to assess the potential of the "modulation-doped Mott FET" (ModMottFET or MMFET) as a next-generation switch. It is shown that the MMFET is characterized by unique "charge gain" characteristics as well as competitive transconductance, small signal gain and current drive. △ Less

Submitted 24 September, 2011; originally announced September 2011.

Comments: The article has been accepted by Journal of Applied Physics. After it is published, it will be found at: http://jap.aip.org/

Journal ref: J. Appl. Phys. 110, 084503 (2011)

Micro-Structured Ferromagnetic Tubes for Spin Wave Excitation

Authors: A. Kozhanov, D. Ouellette, M. Rodwell, D. W. Lee, S. X. Wang, S. J. Allen

Abstract: Micron scale ferromagnetic tubes placed on the ends of ferromagnetic CoTaZr spin waveguides are explored in order to enhance the excitation of Backward Volume Magnetostatic Spin Waves. The tubes produce a closed magnetic circuit about the signal line of the coplanar waveguide and are, at the same time, magnetically contiguous with the spin waveguide. This results in a 10 fold increase in spin wave… ▽ More Micron scale ferromagnetic tubes placed on the ends of ferromagnetic CoTaZr spin waveguides are explored in order to enhance the excitation of Backward Volume Magnetostatic Spin Waves. The tubes produce a closed magnetic circuit about the signal line of the coplanar waveguide and are, at the same time, magnetically contiguous with the spin waveguide. This results in a 10 fold increase in spin wave amplitude. However, the tube geometry distorts the magnetic field near the spin waveguide and relatively high biasing magnetic fields are required to establish well defined spin waves. Only the lowest (uniform) spin wave mode is excited. △ Less

Submitted 25 September, 2010; originally announced September 2010.

Comments: 3 pages, 3 figures

Resonant coupling of coplanar waveguides with ferromagnetic tubes

Authors: A. Kozhanov, D. Ouellette, M. Rodwell, D. W. Lee, S. X. Wang, S. J. Allen

Abstract: Resonant coupling of coplanar waveguides is explored by wrapping proximate shorted ends of the waveguides with micron size ferromagnetic Co90Ta5Zr5 tubes. Ferromagnetic resonance and up to 7 outer surface modes are identified. Experimental results for these contorted rectangular tubes are in good agreement with micromagnetic simulations and model calculations of magnetostatic modes for an ellipt… ▽ More Resonant coupling of coplanar waveguides is explored by wrapping proximate shorted ends of the waveguides with micron size ferromagnetic Co90Ta5Zr5 tubes. Ferromagnetic resonance and up to 7 outer surface modes are identified. Experimental results for these contorted rectangular tubes are in good agreement with micromagnetic simulations and model calculations of magnetostatic modes for an elliptical ferromagnetic tube. These results indicate that the modes are largely determined by tube topology and dimensions but less so by the detailed shape. △ Less

Submitted 13 October, 2009; originally announced October 2009.

Comments: 3 pages, 5 figures

Dispersion and spin wave "tunneling" in nano-structured magnetostatic spin waveguides

Authors: A. Kozhanov, D. Ouellette, M. Rodwell, A. P. Jacob, D. W. Lee, S. X. Wang, S. J. Allen

Abstract: Magnetostatic spin wave dispersion and loss are measured in micron scale spin wave-guides in ferromagnetic, metallic CoTaZr. Results are in good agreement with model calculations of spin wave dispersion. The measured attenuation lengths, of the order of 3um, are several of orders of magnitude shorter than that predicted from eddy currents in these thin wires. Spin waves effectively "tunnel" thro… ▽ More Magnetostatic spin wave dispersion and loss are measured in micron scale spin wave-guides in ferromagnetic, metallic CoTaZr. Results are in good agreement with model calculations of spin wave dispersion. The measured attenuation lengths, of the order of 3um, are several of orders of magnitude shorter than that predicted from eddy currents in these thin wires. Spin waves effectively "tunnel" through air gaps, produced by focused ion beam etching, as large as 1.5 um. △ Less

Submitted 3 November, 2008; originally announced November 2008.

Comments: 3 pages, 5 figures

Dispersion in magnetostatic CoTaZr spin wave-guides

Authors: A. Kozhanov, D. Ouellette, Z. Griffith, M. Rodwell, A. P. Jacob, D. W. Lee, S. X. Wang, S. J. Allen

Abstract: Magnetostatic spin wave dispersion and loss are measured in micron scale spin wave-guides in ferromagnetic, metallic CoTaZr. Results are in good agreement with model calculations of spin wave dispersion and up to three different modes are identified. Attenuation lengths of the order of 3 microns are several of orders of magnitude shorter than that predicted from eddy currents in these thin wires… ▽ More Magnetostatic spin wave dispersion and loss are measured in micron scale spin wave-guides in ferromagnetic, metallic CoTaZr. Results are in good agreement with model calculations of spin wave dispersion and up to three different modes are identified. Attenuation lengths of the order of 3 microns are several of orders of magnitude shorter than that predicted from eddy currents in these thin wires. △ Less

Submitted 29 December, 2008; v1 submitted 3 November, 2008; originally announced November 2008.

Comments: 3 pages, 6 figures

Nonequilibrium ac Josephson effect in mesoscopic Nb-InAs-Nb junctions

Authors: K. W. Lehnert, N. Argaman, H. -R. Blank, K. C. Wong, S. J. Allen, E. L. Hu, H. Kroemer

Abstract: Microwave irradiation of Nb-InAs-Nb junctions reveals frequency-doubled Josephson currents which persist to high temperatures, in the absence of a critical current. A nonequilibrium dynamical model, based on time-dependent Andreev bound states, successfully accounts for the resulting half-integer Shapiro step and an enhancement in the conductance near zero bias. Microwave irradiation of Nb-InAs-Nb junctions reveals frequency-doubled Josephson currents which persist to high temperatures, in the absence of a critical current. A nonequilibrium dynamical model, based on time-dependent Andreev bound states, successfully accounts for the resulting half-integer Shapiro step and an enhancement in the conductance near zero bias. △ Less

Submitted 2 January, 1999; originally announced January 1999.

Comments: 4 pages, 4 embedded figures, to be published in Phys. Rev. Lett. An HTML presentation of these results is available at http://www.qi.ucsb.edu/Konrad/summary/summary.htm

Excitonic Dynamical Franz-Keldysh Effect

Authors: K. B. Nordstrom, K. Johnsen, S. J. Allen, A. -P. Jauho, B. Birnir, J. Kono, T. Noda, H. Akiyama, H. Sakaki

Abstract: The Dynamical Franz-Keldysh Effect is exposed by exploring near-bandgap absorption in the presence of intense THz electric fields. It bridges the gap between the DC Franz- Keldysh effect and multi-photon absorption and competes with the THz AC Stark Effect in shifting the energy of the excitonic resonance. A theoretical model which includes the strong THz field non-perturbatively via a non-equil… ▽ More The Dynamical Franz-Keldysh Effect is exposed by exploring near-bandgap absorption in the presence of intense THz electric fields. It bridges the gap between the DC Franz- Keldysh effect and multi-photon absorption and competes with the THz AC Stark Effect in shifting the energy of the excitonic resonance. A theoretical model which includes the strong THz field non-perturbatively via a non-equilibrium Green Functions technique is able to describe the Dynamical Franz-Keldysh Effect in the presence of excitonic absorption. △ Less

Submitted 23 April, 1998; originally announced April 1998.

Comments: 4 pages in revtex with 5 figures included using epsf. Submitted to Physical Review Letters

Journal ref: Phys. Rev. Lett. Vol. 81, 457 (1998).

Sequential tunneling in doped superlattices: Fingerprints of impurity bands and photon-assisted tunneling

Authors: Andreas Wacker, Antti-Pekka Jauho, Stefan Zeuner, S. James Allen

Abstract: We report a combined theoretical and experimental study of electrical transport in weakly-coupled doped superlattices. Our calculations exhibit negative differential conductivity at sufficiently high electric fields for all dopings. In low-doped samples the presence of impurity bands modifies the current-voltage characteristics substantially and we find two different current peaks whose relative… ▽ More We report a combined theoretical and experimental study of electrical transport in weakly-coupled doped superlattices. Our calculations exhibit negative differential conductivity at sufficiently high electric fields for all dopings. In low-doped samples the presence of impurity bands modifies the current-voltage characteristics substantially and we find two different current peaks whose relative height is changing with the electron temperature. These findings can explain the observation of different peaks in the current-voltage characteristics with and without external THz irradiation in low-doped samples. From our microscopic transport model we obtain quantitative agreement with the experimental current-voltage characteristics without using any fitting parameters. Both our experimental data and our theory show that absolute negative conductance persists over a wide range of frequencies of the free-electron laser source. △ Less

Submitted 17 September, 1997; v1 submitted 11 May, 1997; originally announced May 1997.

Comments: 15 Pages, 12 PS-figures

Journal ref: Physical Review B 56, 13268 (1997)

On the absence of Shapiro-like steps in certain mesoscopic S-N-S junctions

Authors: J. G. E. Harris, N. Argaman, S. J. Allen

Abstract: In DC transport through mesoscopic S-N-S junctions, it is known that the Josephson coupling decreases exponentially with increasing temperature, but the phase dependence of the conductance persists to much higher temperatures and decreases only as 1/T. It is pointed out here that, despite the fact that such a phase-dependent conductance does bring about an AC current for a pure DC voltage, it ca… ▽ More In DC transport through mesoscopic S-N-S junctions, it is known that the Josephson coupling decreases exponentially with increasing temperature, but the phase dependence of the conductance persists to much higher temperatures and decreases only as 1/T. It is pointed out here that, despite the fact that such a phase-dependent conductance does bring about an AC current for a pure DC voltage, it cannot, by itself, lead to the formation of Shapiro steps. △ Less

Submitted 11 March, 1997; originally announced March 1997.

Comments: 1 page, to be published in PRL (as Comment)

Report number: NSF-ITP-96 70

Impurity bands and sequential resonant tunneling in the presence of terahertz fields

Authors: Andreas Wacker, Antti-Pekka Jauho, Stefan Zeuner, S. James Allen

Abstract: A theoretical and experimental study of transport in a low doped multiple quantum well structure shows that impurity bands are essential in understanding the electronic transport both with and without terahertz irradiation. A full self-contained model, which involves only the nominal parameters of the sample, agrees quantitatively with a wide range of experiments. A theoretical and experimental study of transport in a low doped multiple quantum well structure shows that impurity bands are essential in understanding the electronic transport both with and without terahertz irradiation. A full self-contained model, which involves only the nominal parameters of the sample, agrees quantitatively with a wide range of experiments. △ Less

Submitted 3 December, 1996; originally announced December 1996.

Comments: 11 pages 5 figures

Journal ref: Physical Review B 56, 13268 (1997)