Striped electronic phases in an incommensurately modulated van der Waals superlattice
Authors:
Aravind Devarakonda,
Alan Chen,
Shiang Fang,
David Graf,
Markus Kriener,
Austin J. Akey,
David C. Bell,
Takehito Suzuki,
Joseph G. Checkelsky
Abstract:
Electronic properties of crystals can be manipulated using spatially periodic modulations. Long-wavelength, incommensurate modulations are of particular interest, exemplified recently by moiré patterned van der Waals (vdW) heterostructures. Bulk vdW superlattices hosting interfaces between clean 2D layers represent scalable bulk analogs of vdW heterostructures and present a complementary venue to…
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Electronic properties of crystals can be manipulated using spatially periodic modulations. Long-wavelength, incommensurate modulations are of particular interest, exemplified recently by moiré patterned van der Waals (vdW) heterostructures. Bulk vdW superlattices hosting interfaces between clean 2D layers represent scalable bulk analogs of vdW heterostructures and present a complementary venue to explore incommensurately modulated 2D states. Here we report the bulk vdW superlattice SrTa$_2$S$_5$ realizing an incommensurate 1D modulation of 2D transition metal dichalcogenide (TMD) $H$-TaS$_2$ layers. High-quality electronic transport in the $H$-TaS$_2$ layers, evidenced by quantum oscillations, is made anisotropic by the modulation and shows commensurability oscillations akin to lithographically modulated 2D systems. We also find unconventional, clean-limit superconductivity (SC) in SrTa$_2$S$_5$ with a pronounced suppression of interlayer coherence relative to intralayer coherence. Such a hierarchy can arise from pair-density wave (PDW) SC with mismatched spatial arrangement in adjacent superconducting layers. Examining the in-plane magnetic field $H_{ab}$ dependence of interlayer critical current density $J_c$, we find anisotropy with respect to $H_{ab}$ orientation: $J_c$ is maximized (minimized) when $H_{ab}$ is perpendicular (parallel) to the stripes, consistent with 1D PDW SC. From diffraction we find the structural modulation is shifted between adjacent $H$-TaS$_2$ layers, suggesting mismatched 1D PDW is seeded by the striped structure. With a high-mobility Fermi liquid in a coherently modulated structure, SrTa$_2$S$_5$ is a promising host for novel phenomena anticipated in clean, striped metals and superconductors. More broadly, SrTa$_2$S$_5$ establishes bulk vdW superlattices as macroscopic platforms to address long-standing predictions for modulated electronic phases.
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Submitted 13 February, 2024;
originally announced February 2024.
Imaging Se diffusion across the FeSe/SrTiO$_3$ interface
Authors:
Samantha O'Sullivan,
Ruizhe Kang,
Jules A. Gardener,
Austin J. Akey,
Christian E. Matt,
Jennifer E. Hoffman
Abstract:
Monolayer FeSe on SrTiO$_3$ superconducts with reported $T_\mathrm{c}$ as high as 100 K, but the dramatic interfacial $T_\mathrm{c}$ enhancement remains poorly understood. Oxygen vacancies in SrTiO$_3$ are known to enhance the interfacial electron doping, electron-phonon coupling, and superconducting gap, but the detailed mechanism is unclear. Here we apply scanning transmission electron microscop…
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Monolayer FeSe on SrTiO$_3$ superconducts with reported $T_\mathrm{c}$ as high as 100 K, but the dramatic interfacial $T_\mathrm{c}$ enhancement remains poorly understood. Oxygen vacancies in SrTiO$_3$ are known to enhance the interfacial electron doping, electron-phonon coupling, and superconducting gap, but the detailed mechanism is unclear. Here we apply scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) to FeSe/SrTiO$_3$ to image the diffusion of selenium into SrTiO$_3$ to an unexpected depth of several unit cells, consistent with the simultaneously observed depth profile of oxygen vacancies. Our density functional theory (DFT) calculations support the crucial role of oxygen vacancies in facilitating the thermally driven Se diffusion. In contrast to excess Se in the FeSe monolayer or FeSe/SrTiO$_3$ interface that is typically removed during post-growth annealing, the diffused Se remains in the top few unit cells of the SrTiO$_3$ bulk after the extended post-growth annealing that is necessary to achieve superconductivity. Thus, the unexpected Se in SrTiO$_3$ may contribute to the interfacial electron doping and electron-phonon coupling that enhance $T_\mathrm{c}$, suggesting another important role for oxygen vacancies as facilitators of Se diffusion.
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Submitted 12 April, 2022; v1 submitted 5 April, 2021;
originally announced April 2021.
