Showing 1–9 of 9 results for author: Akey, A

Comparison of Short-Range Order in GeSn Grown by Molecular Beam Epitaxy and Chemical Vapor Deposition

Authors: Shang Liu, Yunfan Liang, Haochen Zhao, Nirosh M. Eldose, Jin-Hee Bae, Omar Concepcion, Xiaochen Jin, Shunda Chen, Ilias Bikmukhametov, Austin Akey, Cory T. Cline, Alejandra Cuervo Covian, Xiaoxin Wang, Tianshu Li, Yuping Zeng, Dan Buca, Shui-Qing Yu, Gregory J. Salamo, Shengbai Zhang, Jifeng Liu

Abstract: Atomic short-range order (SRO) in direct-bandgap GeSn for infrared photonics has recently attracted attention due to its notable impact on band structures. However, the SRO in GeSn thin films grown by different methods have hardly been compared. This paper compares SRO in GeSn thin films of similar compositions grown by molecular beam epitaxy (MBE) and chemical vapor deposition (CVD) using atom pr… ▽ More Atomic short-range order (SRO) in direct-bandgap GeSn for infrared photonics has recently attracted attention due to its notable impact on band structures. However, the SRO in GeSn thin films grown by different methods have hardly been compared. This paper compares SRO in GeSn thin films of similar compositions grown by molecular beam epitaxy (MBE) and chemical vapor deposition (CVD) using atom probe tomography. An $\sim$15% stronger preference for Sn-Sn 1$^{st}$ nearest neighbor (1NN) is observed in MBE GeSn than CVD GeSn for both thin film and quantum well samples with Sn composition ranging from 7 to 20%. Interestingly, samples grown by different deposition tools under the same method (either MBE or CVD) showed remarkable consistency in Sn-Sn 1NN SRO, while MBE vs. CVD showed clear differences. Supported by theoretical modeling, we consider that this difference in SRO originates from the impact of surface termination, where MBE surfaces are exposed to ultrahigh vacuum while CVD surfaces are terminated by H to a good extent. This finding not only suggests engineering surface termination or surfactants during the growth as a potential approach to control SRO in GeSn, but also provides insight into the underlying reasons for very different growth temperature between MBE and CVD that directly impact the strain relaxation behavior. △ Less

Submitted 2 July, 2024; originally announced July 2024.

Striped electronic phases in an incommensurately modulated van der Waals superlattice

Authors: Aravind Devarakonda, Alan Chen, Shiang Fang, David Graf, Markus Kriener, Austin J. Akey, David C. Bell, Takehito Suzuki, Joseph G. Checkelsky

Abstract: Electronic properties of crystals can be manipulated using spatially periodic modulations. Long-wavelength, incommensurate modulations are of particular interest, exemplified recently by moiré patterned van der Waals (vdW) heterostructures. Bulk vdW superlattices hosting interfaces between clean 2D layers represent scalable bulk analogs of vdW heterostructures and present a complementary venue to… ▽ More Electronic properties of crystals can be manipulated using spatially periodic modulations. Long-wavelength, incommensurate modulations are of particular interest, exemplified recently by moiré patterned van der Waals (vdW) heterostructures. Bulk vdW superlattices hosting interfaces between clean 2D layers represent scalable bulk analogs of vdW heterostructures and present a complementary venue to explore incommensurately modulated 2D states. Here we report the bulk vdW superlattice SrTa$_2$S$_5$ realizing an incommensurate 1D modulation of 2D transition metal dichalcogenide (TMD) $H$-TaS$_2$ layers. High-quality electronic transport in the $H$-TaS$_2$ layers, evidenced by quantum oscillations, is made anisotropic by the modulation and shows commensurability oscillations akin to lithographically modulated 2D systems. We also find unconventional, clean-limit superconductivity (SC) in SrTa$_2$S$_5$ with a pronounced suppression of interlayer coherence relative to intralayer coherence. Such a hierarchy can arise from pair-density wave (PDW) SC with mismatched spatial arrangement in adjacent superconducting layers. Examining the in-plane magnetic field $H_{ab}$ dependence of interlayer critical current density $J_c$, we find anisotropy with respect to $H_{ab}$ orientation: $J_c$ is maximized (minimized) when $H_{ab}$ is perpendicular (parallel) to the stripes, consistent with 1D PDW SC. From diffraction we find the structural modulation is shifted between adjacent $H$-TaS$_2$ layers, suggesting mismatched 1D PDW is seeded by the striped structure. With a high-mobility Fermi liquid in a coherently modulated structure, SrTa$_2$S$_5$ is a promising host for novel phenomena anticipated in clean, striped metals and superconductors. More broadly, SrTa$_2$S$_5$ establishes bulk vdW superlattices as macroscopic platforms to address long-standing predictions for modulated electronic phases. △ Less

Submitted 13 February, 2024; originally announced February 2024.

Comments: 19 pages, 4 figures

Enhanced Ferromagnetism in Monolayer Cr2Te3 via Topological Insulator Coupling

Authors: Yunbo Ou, Murod Mirzhalilov, Norbert M. Nemes, Jose L. Martinez, Mirko Rocci, Alexander Duong, Austin Akey, Wenbo Ge, Dhavala Suri, Yiping Wang, Haile Ambaye, Jong Keum, Mohit Randeria, Nandini Trivedi, Kenneth S. Burch, David C. Bell, Weida Wu, Don Heiman, Valeria Lauter, Jagadeesh S. Moodera, Hang Chi

Abstract: Exchange-coupled interfaces are pivotal in exploiting two-dimensional (2D) ferromagnetism. Due to the extraordinary correlations among charge, spin, orbital and lattice degrees of freedom, layered magnetic transition metal chalcogenides (TMCs) bode well for exotic topological phenomena. Here we report the realization of wafer-scale Cr2Te3 down to monolayer (ML) on insulating SrTiO3(111) and/or Al2… ▽ More Exchange-coupled interfaces are pivotal in exploiting two-dimensional (2D) ferromagnetism. Due to the extraordinary correlations among charge, spin, orbital and lattice degrees of freedom, layered magnetic transition metal chalcogenides (TMCs) bode well for exotic topological phenomena. Here we report the realization of wafer-scale Cr2Te3 down to monolayer (ML) on insulating SrTiO3(111) and/or Al2O3(001) substrates using molecular beam epitaxy. Robust ferromagnetism persists in the 2D limit. In particular, the Curie temperature TC of 2 ML Cr2Te3 increases from 100 K to ~ 120 K when proximitized to topological insulator (TI) (Bi,Sb)2Te3, with substantially boosted magnetization as observed via polarized neutron reflectometry. Our experiments and theory strongly indicate that the Bloembergen-Rowland interaction is likely universal underlying TC enhancement in TI-coupled magnetic heterostructures. The topological-surface-enhanced magnetism in 2D TMC enables further exchange coupling physics and quantu △ Less

Submitted 23 July, 2024; v1 submitted 22 December, 2023; originally announced December 2023.

Comments: Main: 7 pages, 3 figures, 1 table; SI: 6 pages, 8 figures

3D Nanoscale Mapping of Short-Range Order in GeSn Alloys

Authors: Shang Liu, Alejandra Cuervo Covian, Xiaoxin Wang, Cory T. Cline, Austin Akey, Weiling Dong, Shui-Qing Yu, Jifeng Liu

Abstract: GeSn on Si has attracted much research interest due to its tunable direct bandgap for mid-infrared applications. Recently, short-range order (SRO) in GeSn alloys has been theoretically predicted, which profoundly impacts the band structure. However, characterizing SRO in GeSn is challenging. Guided by physics-informed Poisson statistical analyses of Kth-nearest neighbors (KNN) in atom probe tomogr… ▽ More GeSn on Si has attracted much research interest due to its tunable direct bandgap for mid-infrared applications. Recently, short-range order (SRO) in GeSn alloys has been theoretically predicted, which profoundly impacts the band structure. However, characterizing SRO in GeSn is challenging. Guided by physics-informed Poisson statistical analyses of Kth-nearest neighbors (KNN) in atom probe tomography, a new approach is demonstrated here for 3D nanoscale SRO mapping and semi-quantitative strain mapping in GeSn. For GeSn with ~14 at.% Sn, the SRO parameters of Sn-Sn 1NN in 10x10x10 nm$^{3}$ nanocubes can deviate from that of the random alloys by $\pm$15%. The relatively large fluctuation of the SRO parameters contributes to band-edge softening observed optically. Sn-Sn 1NN also tends to be more favored towards the surface, less favored under strain relaxation or tensile strain, while almost independent of local Sn composition. An algorithm based on least square fit of atomic positions further verifies this Poisson-KNN statistical method. Compared to existing macroscopic spectroscopy or electron microscopy techniques, this new APT statistical analysis uniquely offers 3D SRO mapping at nanoscale resolution in a relatively large volume with millions of atoms. It can also be extended to investigate SRO in other alloy systems. △ Less

Submitted 10 March, 2022; originally announced March 2022.

Layer Hall effect in a 2D topological Axion antiferromagnet

Authors: Anyuan Gao, Yu-Fei Liu, Chaowei Hu, Jian-Xiang Qiu, Christian Tzschaschel, Barun Ghosh, Sheng-Chin Ho, Damien Bérubé, Rui Chen, Haipeng Sun, Zhaowei Zhang, Xin-Yue Zhang, Yu-Xuan Wang, Naizhou Wang, Zumeng Huang, Claudia Felser, Amit Agarwal, Thomas Ding, Hung-Ju Tien, Austin Akey, Jules Gardener, Bahadur Singh, Kenji Watanabe, Takashi Taniguchi, Kenneth S. Burch , et al. (11 additional authors not shown)

Abstract: While ferromagnets have been known and exploited for millennia, antiferromagnets (AFMs) were only discovered in the 1930s. The elusive nature indicates AFMs' unique properties: At large scale, due to the absence of global magnetization, AFMs may appear to behave like any non-magnetic material; However, such a seemingly mundane macroscopic magnetic property is highly nontrivial at microscopic level… ▽ More While ferromagnets have been known and exploited for millennia, antiferromagnets (AFMs) were only discovered in the 1930s. The elusive nature indicates AFMs' unique properties: At large scale, due to the absence of global magnetization, AFMs may appear to behave like any non-magnetic material; However, such a seemingly mundane macroscopic magnetic property is highly nontrivial at microscopic level, where opposite spin alignment within the AFM unit cell forms a rich internal structure. In topological AFMs, such an internal structure leads to a new possibility, where topology and Berry phase can acquire distinct spatial textures. Here, we study this exciting possibility in an AFM Axion insulator, even-layered MnBi$_2$Te$_4$ flakes, where spatial degrees of freedom correspond to different layers. Remarkably, we report the observation of a new type of Hall effect, the layer Hall effect, where electrons from the top and bottom layers spontaneously deflect in opposite directions. Specifically, under no net electric field, even-layered MnBi$_2$Te$_4$ shows no anomalous Hall effect (AHE); However, applying an electric field isolates the response from one layer and leads to the surprising emergence of a large layer-polarized AHE (~50%$\frac{e^2}{h}$). Such a layer Hall effect uncovers a highly rare layer-locked Berry curvature, which serves as a unique character of the space-time $\mathcal{PT}$-symmetric AFM topological insulator state. Moreover, we found that the layer-locked Berry curvature can be manipulated by the Axion field, E$\cdot$B, which drives the system between the opposite AFM states. Our results achieve previously unavailable pathways to detect and manipulate the rich internal spatial structure of fully-compensated topological AFMs. The layer-locked Berry curvature represents a first step towards spatial engineering of Berry phase, such as through layer-specific moiré potential. △ Less

Submitted 21 July, 2021; originally announced July 2021.

Comments: A revised version of this article is published in Nature

Imaging Se diffusion across the FeSe/SrTiO$_3$ interface

Authors: Samantha O'Sullivan, Ruizhe Kang, Jules A. Gardener, Austin J. Akey, Christian E. Matt, Jennifer E. Hoffman

Abstract: Monolayer FeSe on SrTiO$_3$ superconducts with reported $T_\mathrm{c}$ as high as 100 K, but the dramatic interfacial $T_\mathrm{c}$ enhancement remains poorly understood. Oxygen vacancies in SrTiO$_3$ are known to enhance the interfacial electron doping, electron-phonon coupling, and superconducting gap, but the detailed mechanism is unclear. Here we apply scanning transmission electron microscop… ▽ More Monolayer FeSe on SrTiO$_3$ superconducts with reported $T_\mathrm{c}$ as high as 100 K, but the dramatic interfacial $T_\mathrm{c}$ enhancement remains poorly understood. Oxygen vacancies in SrTiO$_3$ are known to enhance the interfacial electron doping, electron-phonon coupling, and superconducting gap, but the detailed mechanism is unclear. Here we apply scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) to FeSe/SrTiO$_3$ to image the diffusion of selenium into SrTiO$_3$ to an unexpected depth of several unit cells, consistent with the simultaneously observed depth profile of oxygen vacancies. Our density functional theory (DFT) calculations support the crucial role of oxygen vacancies in facilitating the thermally driven Se diffusion. In contrast to excess Se in the FeSe monolayer or FeSe/SrTiO$_3$ interface that is typically removed during post-growth annealing, the diffused Se remains in the top few unit cells of the SrTiO$_3$ bulk after the extended post-growth annealing that is necessary to achieve superconductivity. Thus, the unexpected Se in SrTiO$_3$ may contribute to the interfacial electron doping and electron-phonon coupling that enhance $T_\mathrm{c}$, suggesting another important role for oxygen vacancies as facilitators of Se diffusion. △ Less

Submitted 12 April, 2022; v1 submitted 5 April, 2021; originally announced April 2021.

Journal ref: Phys. Rev. B 105, 165407, 2022

Near-infrared optical properties and proposed phase-change usefulness of transition metal disulfides

Authors: Akshay Singh, Yifei Li, Balint Fodor, Laszlo Makai, Jian Zhou, Haowei Xu, Austin Akey, Ju Li, R. Jaramillo

Abstract: The development of photonic integrated circuits would benefit from a wider selection of materials that can strongly-control near-infrared (NIR) light. Transition metal dichalcogenides (TMDs) have been explored extensively for visible spectrum opto-electronics, but the NIR properties of these layered materials have been less-studied. The measurement of optical constants is the foremost step to qual… ▽ More The development of photonic integrated circuits would benefit from a wider selection of materials that can strongly-control near-infrared (NIR) light. Transition metal dichalcogenides (TMDs) have been explored extensively for visible spectrum opto-electronics, but the NIR properties of these layered materials have been less-studied. The measurement of optical constants is the foremost step to qualify TMDs for use in NIR photonics. Here we measure the complex optical constants for select sulfide TMDs (bulk crystals of MoS2, TiS2 and ZrS2) via spectroscopic ellipsometry in the visible-to-NIR range. Through Mueller matrix measurements and generalized ellipsometry, we explicitly measure the direction of the ordinary optical axis. We support our measurements with density functional theory (DFT) calculations, which agree with our measurements and predict giant birefringence. We further propose that TMDs could find use as photonic phase-change materials, by designing alloys that are thermodynamically adjacent to phase boundaries between competing crystal structures, to realize martensitic (i.e. displacive, order-order) switching. △ Less

Submitted 23 May, 2019; originally announced May 2019.

Comments: supplementary at end of document. 6 main figures

Large and Persistent Photoconductivity due to Hole-Hole Correlation in CdS

Authors: Han Yin, Austin Akey, R. Jaramillo

Abstract: Large and persistent photoconductivity (LPPC) in semiconductors is due to the trapping of photo-generated minority carriers at crystal defects. Theory has suggested that anion vacancies in II-VI semiconductors are responsible for LPPC due to negative-U behavior, whereby two minority carriers become kinetically trapped by lattice relaxation following photo-excitation. By performing a detailed analy… ▽ More Large and persistent photoconductivity (LPPC) in semiconductors is due to the trapping of photo-generated minority carriers at crystal defects. Theory has suggested that anion vacancies in II-VI semiconductors are responsible for LPPC due to negative-U behavior, whereby two minority carriers become kinetically trapped by lattice relaxation following photo-excitation. By performing a detailed analysis of photoconductivity in CdS, we provide experimental support for this negative-U model of LPPC. We also show that LPPC is correlated with sulfur deficiency. We use this understanding to vary the photoconductivity of CdS films over nine orders of magnitude, and vary the LPPC characteristic decay time from seconds to 10^4 seconds, by controlling the activities of Cd^{2+} and S^{2-} ions during chemical bath deposition. We suggest a screening method to identify other materials with long-lived, non-equilibrium, photo-excited states based on the results of ground-state calculations of atomic rearrangements following defect redox reactions, with a conceptual connection to polaron formation. △ Less

Submitted 5 June, 2018; originally announced June 2018.

Journal ref: Phys. Rev. Materials 2, 084602 (2018)

Using atom probe tomography to understand Schottky barrier height pinning at the ZnO:Al / SiO2 / Si interface

Authors: R. Jaramillo, Amanda Youssef, Austin Akey, Frank Schoofs, Shriram Ramanathan, Tonio Buonassisi

Abstract: We use electronic transport and atom probe tomography to study ZnO:Al / SiO2 / Si Schottky junctions on lightly-doped n- and p-type Si. We vary the carrier concentration in the the ZnO:Al films by two orders of magnitude but the Schottky barrier height remains constant, consistent with Fermi level pinning seen in metal / Si junctions. Atom probe tomography shows that Al segregates to the interface… ▽ More We use electronic transport and atom probe tomography to study ZnO:Al / SiO2 / Si Schottky junctions on lightly-doped n- and p-type Si. We vary the carrier concentration in the the ZnO:Al films by two orders of magnitude but the Schottky barrier height remains constant, consistent with Fermi level pinning seen in metal / Si junctions. Atom probe tomography shows that Al segregates to the interface, so that the ZnO:Al at the junction is likely to be metallic even when the bulk of the ZnO:Al film is semiconducting. We hypothesize that Fermi level pinning is connected to the insulator-metal transition in doped ZnO, and that controlling this transition may be key to un-pinning the Fermi level in oxide / Si Schottky junctions. △ Less

Submitted 29 October, 2015; originally announced October 2015.

Journal ref: Phys. Rev. Applied 6, 034016 (2016)