Condensed Matter > Materials Science
[Submitted on 17 Sep 2018 (v1), last revised 1 Nov 2018 (this version, v3)]
Title:Breaking the doping limit in silicon by deep impurities
View PDFAbstract:N-type doping in Si by shallow impurities, such as P, As and Sb, exhibits an intrinsic limit due to the Fermi-level pinning via defect complexes at high doping concentrations. Here we demonstrate that doping Si with the chalcogen Te by non-equilibrium processing, a deep double donor, can exceed this limit and yield higher electron concentrations. In contrast to shallow impurities, both the interstitial Te fraction decreases with increasing doping concentration and substitutional Te dimers become the dominant configuration as effective donors, leading to a non-saturating carrier concentration as well as to an insulator-to-metal transition. First-principle calculations reveal that the Te dimers possess the lowest formation energy and donate two electrons per dimer to the conduction band. These results provide novel insight into physics of deep impurities and lead to a possible solution for the ultra-high electron concentration needed in today's Si-based nanoelectronics.
Submission history
From: Shengqiang Zhou [view email][v1] Mon, 17 Sep 2018 07:47:35 UTC (1,462 KB)
[v2] Mon, 24 Sep 2018 06:49:49 UTC (1,392 KB)
[v3] Thu, 1 Nov 2018 13:30:24 UTC (1,628 KB)
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